Department of Electrical Engineering

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IIT Jodhpur

The paper presents a method to design a spatial control system based on sliding mode observer. The non-linear model of Pressurized Heavy Water Reactor (PHWR) including xenon and iodine dynamics is characterized by 70 state variables and 14 inputs and outputs each. Linear nodal model is obtained by linearizing the non-linear dynamic equations of the reactor about the full power operating point. A sliding mode spatial controller is designed for the linearized model of the reactor and the state computation is successfully done by the sliding mode observer. From simulation of the non-linear model of the reactor in representative transients, the proposed control and observer scheme is found to be satisfactory. © 2008 IEEE.

World University root node

2008 10th International Conference on Control, Automation, Robotics and Vision, ICARCV 2008

Spatial control of a large pressurized heavy water reactor using sliding mode observer and control

This paper gives a brief overview of the semiconductor nanowires, in particular the Si- and Ge-nanowires, and summarizes the status of CMOS-compatible nanowire devices. Results were based on the research conducted recently in the Institute with the nanowire technology platform. To facilitate the realization of controllable, scalable and increasing functionality, top-down approach was adopted for the platform establishment on our 8'' CMOS fabrication line. Gate-All-Around (GAA) nanowire FET is chosen as test vehicle, which is projected as the final architecture carrying the CMOS towards the end-of-the-roadmap for Si-devices. Fabrication technology is presented with various gate stacks. Excellent transistor characteristics of GAA Si-nanowire FETs are illustrated with near-ideal subthreshold, low DIBL, high ION/IOFF, accompanied with the demonstration of high gain CMOS Inverter. Impact of low temperature on device behavior is discussed. Ge-wire devices are also presented along with the well behaved vertically stacked device structures. Lastly, the challenges are also discussed. © The Electrochemical Society.

ECS Transactions

Silicon nanowire: Technology platform, devices, applications and challenges

The paper elaborates the Silicon Nanowire arrays fabrication using standard CMOS compatible technologies (top-down) with each array consisting of 100 wires, which are individually electrically measurable for their conductance and facilitating statistical analysis. The arrays are integrated with micro-fluidics for the delivery of various chemicals for surface modification, buffer solutions, biomolecules/ analytes, etc. Biotinylated-ssDNA is detected electrically, label-free by the nanowire sensors modified by streptavidin; further DNA hybridization is also observed similarly on sensors modified by complementary DNA probes. Our approach paves way for realizing high-density, highly sensitive biological and chemical sensors using mass fabrication technologies and thus has the potential to achieve multiplexed detection which is essential for understanding and curing of complex diseases. ©2007 IEEE.

TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Silicon Nanowire array bio-sensor using top-down CMOS technology

A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 μs and a switching-off time of 36 μs. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm × 1.3 mm. ©2007 IEEE.

A low-loss single-pole-double-throw (SPDT) switch circuit

In this paper, a single-mask substrate transfer process for the fabrication of high-aspect-ratio (HAR) suspended structures is presented. The HAR silicon structures are fabricated using a deep reactive ion etching (DRIE) technique and then transferred to a glass wafer using silicon/thin film/glass anodic bonding and silicon thinning techniques. The HAR structures are released using self-aligned wet etching of the glass. Two key processes are discussed. One is the silicon/thin film/glass anodic bonding, with special emphasis on the effect of the bonding material on the bonding shear strength. The other is the silicon backside thinning via aqueous solution of potassium hydroxide (KOH). A lateral RF MEMS switch has been fabricated and demonstrates low loss up to 25 GHz. This substrate transfer process has the advantages of high-aspect ratio, low loss and high flexibility. © 2007 IOP Publishing Ltd.

Journal of Micromechanics and Microengineering

A single-mask substrate transfer technique for the fabrication of high-aspect-ratio micromachined structures

Over the last few years, the research on discrete-time sliding mode control has received a considerable attention. Unlike its continuoustime counterpart, discrete-time sliding mode control is not invariant in general. In this note, an algorithm is presented for robust discrete-time sliding mode control using the concept of multirate output feedback. © 2007 IEEE.

IEEE Transactions on Automatic Control

Multirate output feedback based robust quasi-sliding mode control of discrete-time systems

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

A simple and direct method for interface characterization of OFETs

This article describes the design of a one-bit low-loss X-band phase shifter based on MEMS capacitors. The phase shifter shows a phase shift of 900 at 7.5 GHz, 1350 at 11.4 GHz and 1800 at 15 GHz with applied bias of 33.24 V. The insertion losses are less than 0.2 dB and return losses are more than 14 dB over the desirable frequency ranges from 0 to 16 GHz. Total length of 12 MEMS bridges phase shifter is 2.83 mm. At 7.5 GHz, the phase shift per unit length is 31.80/mm, 47.70/mm at 11.4 GHz and 63.60/mm at 15 GHz showing very large phase shift per length. © 2007 IEEE.

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

One bit distributed X-band phase shifter design based on RFMEMS switches

Arrays of highly ordered silicon nanowires (SiNWs) are fabricated using complementary metal-oxide semiconductor (CMOS) compatible technology and their applications in biosensors are investigated. The SiNW arrays show a concentration-dependent resistance change upon hybridization to complementary target DNA. As in the case of other SiNW biosensing devices, the sensing mechanism can be understood in terms of the change in charge density at the SiNW surface after hybridization, the so called "field effect". The SiNW arrays discriminate satisfactorily against mismatched target DNA. ©2007 IEEE.

Silicon nanowire arrays for ultrasensitive label-free detection of DNA

This article proposes a protection scheme for turbo generators to detect stator ground faults in particular closer to neutral. The scheme considers total generated voltage of the machine and makes use of wavelet multi-resolution analysis. A fault index is defined in terms of peak and valley values of the highest-level wavelet decomposition, which is compared with a threshold value to discriminate from other transients, like sudden unbalance, in load. To identify the faulty coil, an ANN employing back propagation algorithm is used with the lowest level wavelet coefficients as inputs. The results of digital simulation are presented for different fault impedances and fault locations.