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One bit distributed X-band phase shifter design based on RFMEMS switches
, P. Debnath
Published in
Pages: 725 - 728
This article describes the design of a one-bit low-loss X-band phase shifter based on MEMS capacitors. The phase shifter shows a phase shift of 900 at 7.5 GHz, 1350 at 11.4 GHz and 1800 at 15 GHz with applied bias of 33.24 V. The insertion losses are less than 0.2 dB and return losses are more than 14 dB over the desirable frequency ranges from 0 to 16 GHz. Total length of 12 MEMS bridges phase shifter is 2.83 mm. At 7.5 GHz, the phase shift per unit length is 31.80/mm, 47.70/mm at 11.4 GHz and 63.60/mm at 15 GHz showing very large phase shift per length. © 2007 IEEE.
About the journal
JournalProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD