Department of Electrical Engineering

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IIT Jodhpur

In this work, a novel dual-mode Substrate Integrated Coaxial Line (SICL) based bandpass filter operating at 28 GHz, targeted for 5G application is conceived. The proposed dual-mode bandpass filter is realized by exciting the degenerate modes in a corner-cut middle layer square patch by etching cross-shaped slots. The proposed filter exhibits a 12.25% 3-dB fractional bandwidth with a maximum 0.42 dB insertion loss in the passband. Frequency selectivity is enhanced by a transmission zero at 33.8 GHz which extends the out of band rejection up to at least 40 GHz. Further, the proposed SICL based cavity demonstrates a 46.75% size reduction as compared to its Substrate Integrated waveguide (SIW) counterpart. The superior electromagnetic compatibility of the proposed miniaturized SICL based dual-mode bandpass filter makes it an attractive option to deploy in millimeter-wave range. © 2018 IEEE.

World University root node

IEEE MTT-S International Microwave and RF Conference, IMaRC 2018

Design of dual-mode substrate integrated coaxial line (SICL) cavity filter for millimeter-wave applications

No-reference image quality assessment is a challenging task due to the absence of a reference image in practical situations to quantify image quality. This paper proposes a new no-reference image quality metric for natural images using latent noise estimation, Gabor response, and contrast deviation. The algorithm employs an extension of gradient-based SSIM into the no-reference application using SVD-based AWGN estimation, and defines attributes such as Gabor-based smoothness and contrast deviation. The proposed metric arrives at an overall quality score by computing a linear weighted summation of the three image attributes. The proposed algorithm has been tested on several public databases (i.e. LIVE, TID 2013 and CSIQ), and the overall results display a noteworthy correlation of nearly 80% with the human visual system. © 2017 IEEE.

No-reference image quality assessment using Gabor-based smoothness and latent noise estimation

Assessment of multimedia quality relies heavily on subjective assessment, and is typically done by human subjects in the form of preferences or continuous ratings. Such data are crucial for analysis of different multimedia-processing algorithms as well as validation of objective (computational) methods for the said purpose. To that end, statistical testing provides a theoretical framework toward drawing meaningful inferences, and making well-grounded conclusions and recommendations. While parametric tests (such as t test, ANOVA, and error estimates like confidence intervals) are popular and widely used in the community, there appears to be a certain degree of confusion in the application of such tests. Specifically, the assumptions of normality and homogeneity of variance are often not well understood, leading to incorrect application and/or interpretation of the statistical test results. Therefore, the main goal of this paper is to present new guidelines toward proper use of statistical tests and, hence, fix some of the issues in multimedia quality assessment. The said guidelines are derived based on theoretical analysis of sampling distribution of test statistics, and consider practical aspects of data analysis in the said domain. Experimental results on both simulated and real data are presented to support the arguments made. Software that implements the said recommendations is also made publicly available, in order to help researchers and practitioners perform correct statistical comparison of models. © 1999-2012 IEEE.

Fulltext

IEEE Transactions on Multimedia

Data Analysis in Multimedia Quality Assessment: Revisiting the Statistical Tests

We propose a new scheme to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials. The scheme is used to extract material parameters from experimental polarization-electric field (P-E) measurements from the literature. A Sentaurus TCAD structure is constructed with the extracted parameters, and the simulated P-E curve is in a good agreement with the experimental data. Furthermore, variation of the device performance in a negative capacitance field-effect transistor (NCFET) due to the spatial distribution of DE and FE phases is studied using Sentaurus TCAD. It is found that the resultant variations of on and off currents can be up to 14.44% and 30.23%, respectively, thus showing the impact of inhomogeneous crystalline phases of the FE material on device performance. © 2018 IEEE.

IEEE Transactions on Electron Devices

Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor

A complete simulation framework is presented for Negative Capacitance FinFETs including Numerical Simulation, Compact Modeling, and Circuit Evaluation. A 2D Numerical Simulation for FinFETs coupled with the Landau's Ferroelectric Model captures device characteristics. A new version of the distributed Negative-Capacitance FinFET Compact Model is also presented in this work, where influence of short-channel effects in Ferroelectric voltage amplification are newly incorporated. Finally, a detailed analysis, from an energy perspective, is presented for the gate voltage amplification of Negative Capacitance FinFETs in ring-oscillator circuits. © 2018 IEEE.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation

In this chapter, we first review the current literature related to the haptic data compression techniques. Subsequently, we review the concept of using perceptual deadzone for data compression. We review perceptually adaptive sampling strategies and their corresponding deadzones for multidimensional haptic signals. After that the literature related to the effect of rate of change of a stimuli on the Weber fraction is reviewed. © 2018, Springer Nature Singapore Pte Ltd.

Studies in Computational Intelligence

Perceptual deadzone

Conclusions

A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations. © 2018 IEEE.

2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018

A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect

In this note, the stability of an uncertain system with actuator saturation using super-twisting controller (STC) is analysed. First, a new proof of STC ensuring finite-time stability of the system is proposed using geometric method which gives a new gain conditions. Then, using the proposed proof the domain of attraction (DOA) is explicitly calculated for the system with bounded control. © 2017 Elsevier Ltd

Automatica

A new geometric proof of super-twisting control with actuator saturation

The critical role of the mixing ratio of the semiconductor and polymer solutions on the performance and electro-mechanical stability of the flexible blend OFETs is investigated. An improvement in the OFET performance was observed with increasing fraction of polymer in the solution. The maximum field-effect mobility improved from 0.08 for neat TIPS-pentacene OFETs to 0.24, 0.25 and 0.57 cm2 V−1 s−1 for semiconductor:polymer blend OFETs with mixing ratio of 3:1, 1:1 and 1:3 respectively. Under stress conditions of VDS = VGS = −5 V for 1 h, the 1:3 blend devices outperformed other categories of devices with very small drain current decay of ∼2% and 11% and small threshold voltage shift of 0.05 V and 0.27 V before and after 1.27% (Rbend = 5 mm) tensile strain application respectively. These devices also exhibited superior reliability with least performance spread over 100 continuous transfer characteristics measurement cycles before and after application of strain. © 2018 Elsevier B.V.