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A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect
P. Kushwaha, , C.K. Dabhi, Y.-K. Lin, J.-P. Duarte, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations. © 2018 IEEE.