A physics-based unified flicker noise model for FDSOI transistor is proposed. Flicker noise power spectral density (PSD) at the front and back interfaces are calculated using oxide-trap-induced carrier number (CNF) and correlated surface mobility fluctuation (CMF) mechanisms. The model predicts correct flicker noise behavior from weak inversion region to strong inversion region for a wide range of the front and backgate voltages. The proposed model is computationally efficient and implementable in any SPICE model for circuit simulations. © 2018 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

C.K. Dabhi

Y.-K. Lin

J.-P. Duarte

C. Hu

Y.S. Chauhan

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A Unified Flicker Noise Model for FDSOI MOSFETs Including Back-bias Effect

2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018

Journal	Data powered by Typeset2018 IEEE International Conference on Electronics, Computing and Communication Technologies, CONECCT 2018
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.