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Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor
M.-Y. Kao, A.B. Sachid, Y.-K. Lin, Y.-H. Liao, , P. Kushwaha, J.P. Duarte, H.-L. Chang, S. Salahuddin, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 65
Issue: 10
Pages: 4652 - 4658
We propose a new scheme to consider the dielectric (DE) phases inside polycrystalline ferroelectric (FE) materials. The scheme is used to extract material parameters from experimental polarization-electric field (P-E) measurements from the literature. A Sentaurus TCAD structure is constructed with the extracted parameters, and the simulated P-E curve is in a good agreement with the experimental data. Furthermore, variation of the device performance in a negative capacitance field-effect transistor (NCFET) due to the spatial distribution of DE and FE phases is studied using Sentaurus TCAD. It is found that the resultant variations of on and off currents can be up to 14.44% and 30.23%, respectively, thus showing the impact of inhomogeneous crystalline phases of the FE material on device performance. © 2018 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.