Department of Electrical Engineering

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IIT Jodhpur

In this paper, a novel concept to implement millimeterwave substrate integrated waveguide-based circuits for chipless identification application has been demonstrated. The proposed design utilizes a pair of compact half mode SIW cavity to encode the interrogating signal and resend the signal through the open-end aperture of the cavity. Thus, the encoding resonator itself has been utilized as radiator of the interrogating signal which helps to improve the compactness of the design. The complete design has been realized in K band making physical size of the circuit very small which makes it attractive for practical application. © 2019 URSI. All rights reserved.

2019 URSI Asia-Pacific Radio Science Conference, AP-RASC 2019

Design of SIW based millimeter wave chipless identification tag for low cost application

The Tactile Internet will enable users to physically explore remote environments and to make their skills available across distances. An important technological aspect in this context is the acquisition, compression, transmission, and display of haptic information. In this paper, we present the fundamentals and state of the art in haptic codec design for the Tactile Internet. The discussion covers both kinesthetic data reduction and tactile signal compression approaches. We put a special focus on how limitations of the human haptic perception system can be exploited for efficient perceptual coding of kinesthetic and tactile information. Further aspects addressed in this paper are the multiplexing of audio and video with haptic information and the quality evaluation of haptic communication solutions. Finally, we describe the current status of the ongoing IEEE standardization activity P1918.1.1 which has the ambition to standardize the first set of codecs for kinesthetic and tactile information exchange across communication networks. © 1963-2012 IEEE.

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Proceedings of the IEEE

Haptic codecs for the tactile internet

In this work, a combination of a thin layer of Copper (II) phthalocyanine (CuPc) and TIPS-pentacene crystal was used to enhance the photo-sensing spectrum of photo- sensitive organic field-effect transistors (photo-OFETs). In TIPS-pentacene/CuPc bi-layer devices, the different conduction path not only reduced the total number of traps but also enhanced the sensing spectrum. It was found that, though the TIPS-pentacene was able to sense only blue and green colour well, and CuPc was able to sense only red and green colour well; the TIPS-pentacene/CuPc bi-layer were able to sense all three colors, enhancing the range of sensing. On illumination, bi-layer TIPS-pentacene/CuPc OFETs exhibited higher values of shift in threshold voltage (|ΔV TH |) compared to neat TIPS-pentacene and bare CuPc OFETs, due to change in the spatial distribution in the trap state density and associated pattern of trapping of photo-generated charge carriers. It was also found that the values of photo-responsivity (R max ) and photo-detection time for the bi-layer OFETs were in between that for OFETs with TIPS-pentacene or CuPc. © 2019

Synthetic Metals

TIPS-pentacene/Copper (II) phthalocyanine bi-layer photo sensitive organic field-effect transistors

High-performance operationally stable organic field-effect transistors were successfully fabricated on a PowerCoat HD 230 paper substrate with a TIPS-pentacene:polystyrene blend as the active layer and poly(4-vinylphenol)/HfO 2 as the hybrid gate dielectric. The fabricated devices exhibited excellent p-channel characteristics with a maximum and av field effect mobility of 0.44 and 0.22(±0.11) cm 2 V -1 s -1 , respectively, av threshold voltage of 0.021(±0.63) V, and current on-off ratio of â10 5 while operating at â'10 V. These devices exhibited remarkable stability under effects of gate bias stress and large number of repeated transfer scans with negligible performance spread. In addition, these devices displayed very stable electrical characteristics after long exposure periods to humidity and an excellent shelf life of more than 6 months in ambient environment. Thermal stress at high temperatures however deteriorates the device characteristics because of the generation and propagation of cracks in the active semiconductor crystals. Furthermore, novel paper-based phototransistors have been demonstrated with these devices. © 2019 American Chemical Society.

ACS Applied Materials and Interfaces

Solution-Processed Organic Field-Effect Transistors with High Performance and Stability on Paper Substrates

Physics behind the improvement in breakdown voltage of AlGaN/GaN HEMTs with carbon-doping of GaN buffer is discussed. Modeling of carbon as acceptor traps and self-compensating acceptor/donor traps is discussed with respect to their impact on avalanche breakdown. Impact of carbon behaving as a donor as well as acceptor traps on electric field relaxation and avalanche generation is discussed in detail to establish the true nature of carbon in GaN that delays the avalanche action. This understanding of the behavior of carbon-doping in GaN buffer is then utilized to discuss design parameters related to carbon doped buffer. Design parameters such as undoped channel thickness and relative trap concentration induced by carbon-doping are discussed with respect to the performance metrics of breakdown voltage, leakage current, sheet charge density, and dynamic ON-resistance. © 1963-2012 IEEE.

IEEE Transactions on Electron Devices

Part I: Physical Insight into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

Optical packet switching is an upcoming and promising technology that can be used in optical data centers and in next generation data transfer due to the enormous bandwidth of optical fiber. In recently proposed OPS design to resolve contention among packets fiber delay lines (FDLs) based buffering is preferred choice. In this paper. a dual buffer based optical packet switch design is proposed, where buffer sizes are chosen intelligently thus allowing storage of large number of contending packets within limited buffer storage. Hence, using a limited number of FDLs very low packet loss rate is possible.Through simulations, it has been shown that at the load of ``0.9{''} a very' low packet loss rate of the order of ``10(-)(10){''} is possible.To the best of our knowledge, this is the lowest packet loss rate using FDLs till date in any switch design.The proposed switch design is also compared with recently published designs to prove its superiority over other designs. The analysis of the switch is done in terms of power budget analysis, cost analysis, and packet loss performance under different buffering conditions.

JOURNAL OF ENGINEERING RESEARCH

Dual buffers optical based packet switch incorporating arrayed waveguide gratings

This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd2+) sensor with mercaptopropionic acid (MPA) and glutathione (GSH) functionalization. The sensing response of the sensor was analyzed by detecting Cd2+ ions at different concentrations. The AlGaN/GaN HEMT sensor exhibits excellent response with the sensitivity of 0.241 μ A /ppb, a fast response time of 3 s, and a lower detection limit of 0.255 ppb. The observed lower detection limit is significantly lower than the World Health Organization (WHO) standard recommended limit for Cd2+ ions in drinking water. Furthermore, the sensor showed good selectivity of Cd2+ ions toward other heavy metal ions. The results indicate that the binding properties of GSH to Cd and the sensitivity of 2-D electron gas toward the variation of charges at the gate region make the device highly sensitive with rapid detection of Cd2+ ions. © 2001-2012 IEEE.

IEEE Sensors Journal

MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection

The present report investigates hydrogen gas sensing properties on PAN/(PAN-b-PMMA) derived electrospun nanoporous carbon nanofibers loaded on ZnO nanostructures. Polymer blend of PAN and PAN-b-PMMA is used to obtain the high surface area porous CNF which improve further sensing performance. Moreover, a facile technique such as drop cast method is used to load the CNF (0.1–0.5 wt%) on Au pattern interdigitated electrodes over ZnO nanostructures. Loading of CNF was optimized to ensure proper connection between the electrodes over ZnO surface, which was measured using I–V characteristics. Initially, current decreased for less amount of CNF (0.1–0.2 wt%), which later increased for high concentration of CNF (0.3–0.5 wt%). It was further observed that 0.2 wt% CNF/ZnO nanostructures based sensor exhibited maximum sensing response (73.54%) as compared to CNF (3.29%) and ZnO (44.51%) for 100 ppm hydrogen at 150 °C. This enhanced sensing response may be attributed to diffusion of hydrogen molecules through the nanoporous CNF, thus enabling the formation of p - n heterojunction at the interface of CNF and ZnO. The presence of oxygen functional groups on CNF surface also contributes to the enhancement of the sensing performance. © 2019 Elsevier B.V.

Sensors and Actuators, B: Chemical

PAN/(PAN-b-PMMA) derived nanoporous carbon nanofibers loaded on ZnO nanostructures for hydrogen detection

Real-time multiple event analysis is important for reliable situational awareness and secure operation of the power system. Multiple sequential events can induce complex superimposed pattern in the data and are challenging to analyze in real time. This paper proposes a method for accurate detection, temporal localization, and classification of multiple events in real time using synchrophasor data. For detection and temporal localization, a Teager-Kaiser energy operator (TKEO) based method is proposed. For event classification, a time series classification based method using energy similarity measure (ESM) is proposed. The proposed method is tested for simulated multiple event cases in the IEEE-118 bus system using DigSilent/PowerFactory and real PMU data for the Indian grid. © 2005-2012 IEEE.

IEEE Transactions on Industrial Informatics

Real-Time Multiple Event Detection and Classification in Power System Using Signal Energy Transformations

A superpixel based on-chip compression is proposed in this paper. Pixels are compared in spatial domain and the pixels with similar characteristics are grouped to form the superpixels. Only one pixel corresponding to each superpixel is read to achieve the compression. The on-chip compression circuit is designed and simulated in UMC 180 nm CMOS technology. For 70% compression, the proposed design results in about 33% power saving. The reconstruction of the compressed image is performed off-chip using bilinear interpolation. Further, two enhancement approaches are developed to improve the output image quality. The first approach is based on wavelet decomposition whereas the second approach uses a deep convolutional neural network. The proposed reconstruction technique takes two orders of magnitude lesser time as compared to the state-of-the-art technique. On an average, it results in peak signal to noise ratio (PSNR) and structural similarity index measure values of 30.999 and 0.9088 dB, respectively, for 70% compression in natural images. On the other hand, the best values observed from the existing approaches for the two metrics are 28.634 and 0.8115 dB, respectively. Further, the proposed technique is found useful for thermal image compression and reconstruction. The experiment shows that the compression of 86.2% can be achieved using the threshold of two intensity levels and the compressed image can be reconstructed with the PSNR of 45.87 dB. © 2018 IEEE.