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Solution-Processed Organic Field-Effect Transistors with High Performance and Stability on Paper Substrates
V. Raghuwanshi, D. Bharti, A.K. Mahato, I. Varun,
Published in American Chemical Society
PMID: 30701957
Volume: 11
Issue: 8
Pages: 8357 - 8364
High-performance operationally stable organic field-effect transistors were successfully fabricated on a PowerCoat HD 230 paper substrate with a TIPS-pentacene:polystyrene blend as the active layer and poly(4-vinylphenol)/HfO 2 as the hybrid gate dielectric. The fabricated devices exhibited excellent p-channel characteristics with a maximum and av field effect mobility of 0.44 and 0.22(±0.11) cm 2 V -1 s -1 , respectively, av threshold voltage of 0.021(±0.63) V, and current on-off ratio of â10 5 while operating at â'10 V. These devices exhibited remarkable stability under effects of gate bias stress and large number of repeated transfer scans with negligible performance spread. In addition, these devices displayed very stable electrical characteristics after long exposure periods to humidity and an excellent shelf life of more than 6 months in ambient environment. Thermal stress at high temperatures however deteriorates the device characteristics because of the generation and propagation of cracks in the active semiconductor crystals. Furthermore, novel paper-based phototransistors have been demonstrated with these devices. © 2019 American Chemical Society.
About the journal
JournalData powered by TypesetACS Applied Materials and Interfaces
PublisherData powered by TypesetAmerican Chemical Society
Open AccessNo