Department of Electrical Engineering

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In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too. © 2019 IEEE.

World University root node

IEEE Transactions on Electron Devices

Improved modeling of bulk charge effect for BSIM-BULK model

1/f noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/ {f} noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for n- and p-channel FinFETs, we have improved the BSIM-CMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/f noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers. © 1980-2012 IEEE.

IEEE Electron Device Letters

Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node

In this article, a compact fully planar high gain antenna based on half-mode substrate integrated waveguide (HMSIW) cavity is presented. The design uses a novel configuration of HMSIW cavity with high length to width ratio along with tapered open edge and a pair of slot stub. The high length to width ratio of the cavity helps to excite closely spaced multiple TEy m10 cavity modes within comparatively smaller footprint due to use of the HMSIW cavity. These modes combine to give hybrid mode resonance in the cavity which helps to generate a narrow beam high gain radiation pattern of the antenna. The size of the proposed antenna is further reduced and a pair of slot stub is put along the sidewall of the cavity which helps to sustain similar hybrid mode field distribution within much smaller dimension. A size reduction of 76.7% is achieved in the proposed design configuration without degrading much of the gain performance. The proposed antenna resonates at 9.8 GHz with a gain of 7.9 dBi which is much higher than other reported HMSIW cavity antenna. The proposed antenna may find application in point to point communication, short range radar in X band. © 2019 Wiley Periodicals, Inc.

International Journal of RF and Microwave Computer-Aided Engineering

Compact high gain half-mode substrate integrated waveguide cavity antenna using hybrid mode

Time-lapse hyperspectral image (HSI) data has an enormous size and demands lossless compression for most of the high fidelity applications. In literature, spatial and spectral correlations in HSI are widely studied and used for compression. We propose a novel adaptive switched prediction-based scheme, which efficiently exploits temporal correlations in addition to spatial, and spectral correlations. The predictor switching uses a threshold, which is chosen based on the residual error distribution of already encoded band. Hence, our method does not need any overhead to be transmitted. The proposed scheme outperforms other state-of-the-art methods in bit-rate, and the method is computationally efficient too.

LOW-COMPLEXITY ADAPTIVE SWITCHED PREDICTION-BASED LOSSLESS COMPRESSION OF TIME-LAPSE HYPERSPECTRAL IMAGE DATA

Clustering and categorization of similar images using SIFT and SURF require a high computational cost. In this paper, a simple approach to reduce the cardinality of keypoint set and prune the dimension of SIFT and SURF feature descriptors for efficient image clustering is proposed. For this purpose, sparsely spaced (uniformly distributed) important keypoints are chosen. In addition, multiple reduced dimensional variants of SIFT and SURF descriptors are presented. Moreover, clustering time complexity is also improved by proposed contextual bag-of-features approach for partitioned keypoint set. The F-measure statistic is used to evaluate clustering performance on a California-ND dataset containing near-duplicate images. Clustering accuracy of the proposed pruned SIFT and SURF is found to be at par with traditional SIFT and SURF with a significant reduction in computational cost. © 2019 IEEE.

ICASSP, IEEE International Conference on Acoustics, Speech and Signal Processing - Proceedings

Pruning SIFT SURF for Efficient Clustering of Near-duplicate Images

We report the UV curing of poly(4-vinylphenol) (PVP), which is a widely used polymer dielectric for flexible organic field-effect transistors. OFETs with UV cured PVP dielectric outperformed the classical long-term high temperature annealed PVP OFETs in electrical performance with lower hysteresis, lower threshold voltage shifts in 100 continuous transfer scans and lower normalized drain current decay when bias stressed for 1 h. © 2019 IEEE.

FLEPS 2019 - IEEE International Conference on Flexible and Printable Sensors and Systems, Proceedings

UV cured PVP gate dielectric for Flexible Organic Field Effect Transistors

Organic FETs (OFETs) with bilayer dielectric poly(4-vinylphenol) (PVP)/HfO2 and polyvinyl alcohol (PVA)/HfO2 were fabricated on a flexible low-cost Kapton tape substrate with TIPS-pentacene:polystyrene as an active layer. The devicesexhibited average andmaximum field-induced mobility of 0.25(±0.10) and 0.37 cm2Vcm-1 scm-1 for PVP/HfO2 devices, and 0.35(±0.18) and 0.69 cm2Vcm-1 scm-1 for PVA/HfO2 devices, respectively, with low threshold voltage and I ON to I OFF ratio approaching 104 for both types of devices. Overlapping transfer multiple scans with very less performance variation under ambient conditions were observed. The devices were found to be fairly stable even when electrical stress was applied after a period of 5 months. Devices exhibited small degradation in I DS and small ΔVTH with high degree of reliability and small performance spreads under combined effects of ambient exposure over a period of 5 months and successive electrical stress. In addition, inverter based on these OFETs with external load was also demonstrated. © 1963-2012 IEEE.

Operationally Stable Organic FETs with Bilayer Dielectrics on Low-Cost Flexible Polyimide Substrate

In this study, a three dimensional (3D) MoS 2 /β-Bi 2 O 3 heterostructure with high-performance for photocatalytic removal of pollutants was constructed by a simple deposition of the MoS 2 quantum dots on the surface of porous β-Bi 2 O 3 spheres. Compared with pure β-Bi 2 O 3 microspheres, the 1.0% MoS 2 /β-Bi 2 O 3 composite exhibited excellent photocatalytic activity in the degradation of Bisphenol A (BPA) in aqueous solution and oxidative removal of gaseous NO under visible light irradiation, and the removal efficiency reached 94.0% and 41.4% for BPA and NO within 30 min, respectively. The enhanced photocatalytic activity is attributed to the formation heterojunction between MoS 2 quantum dots and β-Bi 2 O 3 , which facilitates the separation and transfer efficiency of photogenerated electron–hole pairs, boosts catalytic active sites and hinders an electron–hole recombination rate. The results of trapping experiments indicates that both of O 2 −∙ and h + are the reactive species for BPA degradation. The recyclability test confirms that the 1.0% MoS 2 /β-Bi 2 O 3 composite photocatalyst has a superior stability during recycling cycle. This work demonstrates that a unique 3D photocatalyst system can provides a new perspective and opens up new opportunities on the design of efficient composite photocatalysts. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.

Journal of Materials Science: Materials in Electronics

MoS 2 quantum dots-modified porous β-Bi 2 O 3 microspheres with enhanced visible-light-induced photocatalytic activity for Bisphenol A degradation and NO removal

To address the formidable challenges associated with large-scale and high-quality fabrication of MoS2, we reported a two-step process for growing large-scalable MoS2 films with superb quality. Firstly, we grow different thickness Mo films on SiO2/Si substrates by DC magnetron sputtering technique. Secondly, the deposited film was then sulfurized in a sulfur-rich environment. The qualitative analysis confirmed the growth of highly crystalline and continuous few-layer to multi-layer MoS2 films. We have also examined the sensing performance of deposited ML-MoS2 film upon NO2 exposure. © 2019 IEEE.

2019 IEEE 5th International Conference for Convergence in Technology, I2CT 2019

Scalable Growth of High-Quality MoS2 Film by Magnetron Sputtering: Application for NO2 Gas Sensing

This paper reports a novel capacitive RF-MEMS switch. The presented device has frequency reconfigurable characteristics and thus can be used in multi-band wireless systems. The switch is realized through two non-uniform cantilevers with dissimilar shape. The structure of the cantilevers is kept dissimilar to achieve the different value of inductance in the down-state of the device and hence the different electrical resonant frequency. Further, the proposed device has also overcome issue of shift in the isolation response caused by residual stress in switching structure and micro-roughness in the deposited SiO2 layer. The device forms a M-I-M capacitor at the central conductor of the transmission line to resolve the above cited problem and also allows the use of cantilever structures for the implementation of capacitive switches in place of conventional bridge type structures. The measured isolation response shows three optimum values of 25.40 dB, 20.44 dB, and 30.80 dB at 9.4 GHz, 11.6 GHz, and 25.2 GHz respectively. The measured insertion loss is also better than 0.41 dB up to 30 GHz. Under, mechanical characterization, cantilever with two narrow beams shows resonant frequency of 3.90 kHz and cantilever with single narrow beam shows resonant frequency of 4.66 kHz. Furthermore, the device has measured pull-in voltage which is less than 16 V. © 2019