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Improved modeling of bulk charge effect for BSIM-BULK model
C. Gupta, , R. Goel, C. Hu, Y.S. Chauhan
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 66
Issue: 6
Pages: 2850 - 2853
In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too. © 2019 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.