In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too. © 2019 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

C. Gupta

R. Goel

C. Hu

Y.S. Chauhan

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Improved Modeling of Bulk Charge Effect for BSIM-BULK Model

IEEE Transactions on Electron Devices

Improved modeling of bulk charge effect for BSIM-BULK model

Journal	Data powered by TypesetIEEE Transactions on Electron Devices
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	00189383