1/f noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/ {f} noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for n- and p-channel FinFETs, we have improved the BSIM-CMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/f noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers. © 1980-2012 IEEE.