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Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node
P. Kushwaha, , Y.-K. Lin, A. Dasgupta, M.-Y. Kao, Y. Lu, Y. Yue, X. Chen, J. Wang, W. SyShow More
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 40
Issue: 6
Pages: 985 - 988
1/f noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/ {f} noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for n- and p-channel FinFETs, we have improved the BSIM-CMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/f noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers. © 1980-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.