Department of Electrical Engineering

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IIT Jodhpur

In this paper, we present the modeling of zero-threshold voltage (VTH) bulk MOSFET, also called native devices, using enhanced BSIM6 model. Devices under study show abnormally high leakage current in weak inversion, leading to degraded subthreshold slope. The reasons for such abnormal behavior are identified using technology computer-aided design (TCAD) simulations. Since the zero-VTH transistors have quite low doping, the depletion layer from drain may extend upto the source (at some non-zero value of VDS) which leads to punch-through phenomenon. This source-drain leakage current adds with the main channel current, causing the unexpected current characteristics in these devices. TCAD simulations show that, as we increase the channel length (Leff) and channel doping (NSUB), the source-drain leakage due to punch-through decreases. We propose a model to capture the source-drain leakage in these devices. The model incorporates gate, drain, body biases and channel length as well as channel doping dependency too. The proposed model is validated with the measured data of production level device over various conditions of biases and channel lengths. © 2017 The Japan Society of Applied Physics.

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Japanese Journal of Applied Physics

Analysis and modeling of zero-threshold voltage native devices with industry standard BSIM6 model

Interestingness is defined as the power of engaging and holding the curiosity. While humans can almost effortlessly rank and judge interestingness of a scene, automated prediction of interestingness for an arbitrary scene is a challenging problem. In this work, we attempt to develop a computational model for the said problem. Our approach is based on identifying and extracting context-specific features from video clips. These features are subsequently utilized in a predictor model to provide continuous scores that can be related to the interestingness of the scene in question. Such computational models can be useful in a automated analysis of videos (eg. movie, a CCTV footage or a clip from an advertisement). © 2017 Author/owner(s).

CEUR Workshop Proceedings

DA-IICT at MediaEval 2017: Objective prediction of media interestingness

In this paper,we report anomalous behavior of transconductance(gm) in halo implantedMOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp change of slope in saturation which cannot be modeled by conventional compact models. The cause of such behavior is identified and explained using the TCAD simulations of source side halo, drain side halo (DH), both side halos, and uniformly doped transistors. An analytical model, based on the equivalent conductance of the halo device, is developed to understand the gm behavior. It is shown that the commonly used approach where only the DH region is considered in saturation, is insufficient to model the atypical gm behavior. The effect of oxide thickness (Tox) variation on gm is also studied, which demonstrates a deviation from the conventional gm behavior for halo implanted devices with thicker Tox. A computationally efficient SPICE model is proposed to model gm characteristics which shows excellent matching with the measured data. © 1963-2012 IEEE.

IEEE Transactions on Electron Devices

Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling

In this article, a study of planar triple band unidirectional Substrate Integrated Waveguide (SIW) cavity backed slot antenna using equivalent circuit model is presented. The proposed antenna uses a modified dumbbell shaped slot of much larger length placed in a planar SIW cavity to excite three closely spaced SIW cavity hybrid modes which help the slot to radiate into free space. The design is analyzed with the help of equivalent circuit model to predict the resonant frequencies of the design and also to explain the excitation mechanism of the proposed slot antenna. The proposed circuit model is validated by comparing its performance with the simulation model for a wide range of parametric variation. The relationship between modification in design dimension with the variation of coupling between feed line and cavity modes is studied which gives a design guideline for the proposed antenna. The fabricated prototype of the antenna resonates at 7.39, 9.43, and 14.79 GHz with a gain of 3.2, 4.9, 4.7 dBi and front-to-back ratio (FTBR) of 10 dB, respectively, at three resonant frequencies which makes it suitable for C (4–8 GHz), X (8–12 GHz), and Ku (12–18 GHz) band applications. © 2016 Wiley Periodicals, Inc.

International Journal of RF and Microwave Computer-Aided Engineering

Computer aided equivalent circuit model of SIW cavity backed triple band slot antenna

In this paper, a novel design of half-mode substrate integrated waveguide (HMSIW) cavity based antenna is presented for dual-frequency application in Ka band (26-40 GHz). Two HMSIW cavities are placed side by side and are excited through the help of inductive coupling window followed by a section of HMSIW line. As a result, the cavities are excited at TE110 HM mode and the open end dielectric aperture of the HMSIW cavity starts radiating into free space. The two HMSIW line are connected to the input SIW feeding line with the help of a SIW to HMSIW power divider. The proposed antenna resonates at 26 GHz and 29 GHz while maintaining a compact design configuration which makes it suitable for application in LMDS frequency band. © 2017 IEEE.

2017 IEEE Antennas and Propagation Society International Symposium, Proceedings

Design of dual-frequency HMSIW cavity antenna for ka band application

For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly. © 2017 The Japan Society of Applied Physics.

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Dependence of avalanche breakdown on surface &amp; buffer traps in AlGaN/GaN HEMTs

Atomic layer deposited AlOx based resistive random access memories were fabricated with a new multi-temperature deposition (MTD) scheme, where a 40 nm thick AlOx film was deposited with temperature-thickness sequence of 150 °C (10 nm)/80 °C (20 nm)/150 °C (10 nm). Electrical characteristics of thus fabricated devices demonstrate improved bipolar resistive switching behavior with lower set and reset voltages of 0.65 V and − 1.15 V respectively, decent repeatability of 75 cycles, reliable data retention upto 103 s, small variation of 0.29 V and 0.17 V in set and reset voltages respectively, and symmetric current-voltage curves. The conduction mechanism has been explained as ohmic and space charge limited conduction at lower and higher voltages respectively. Due to different deposition temperature, oxygen vacancy concentration was different in each layer of the MTD film, which led to formation of a conductive filament with nonhomogeneous strength and dimensions across the film. Localization of effective switching phenomenon in the region with weaker conductive filament yielded an improved performance with lower switching voltages in corresponding multi-temperature devices. © 2017 Elsevier B.V.

Solid State Ionics

Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlOx/Ti MIM structure

Subject identification is essential in smart environments. Identification of differently disguised human subjects through visual surveillance methods is extremely challenging. Subject may use various artifacts to defy methods based on body shape and size matching. The radio imaging through wireless sensing is ubiquitous, device-free and privacy-preserving. This paper is based on our observation when a subject is placed in-between the line-of-sight of a closely placed pair of wireless nodes. A radio shadow is observed at the receiver due to interaction of the subject with signals. We observed that the subject can be identified by comprehensive analysis of the received radio shadow and its derivative signatures. Wi-Bioscan is the first ever system to find uniqueness among human radio shadows to identify the subject even if it is disguised in four different ways. During our investigation, we evaluated Wi-BioScan system for different indoor/outdoor locations. System is ubiquitous and scalable due to its feature of location independence and generation of a rich template. The method is also robust against surrounding dynamics such as other human presence and object movements. © 2017 IEEE.

Proceedings of IEEE Sensors

Wi-BioScan: Human identification based on radio shadows

Inverter circuits based on neat TIPS-pentacene and TIPS-pentacene: polystyrene blend organic field-effect transistors (OFETs) with external resistive load has been studied. Resistive loads of 28 ΜΩ, 40 ΜΩ, 68 ΜΩ and 108 ΜΩ were used to study the inverter transfer characteristics. Transfer characteristics of both types of inverters are improved with increasing load resistance. Inverter with a representative OFET with neat TIPS-pentacene shows a DC voltage gain of -6.9, swing of 40 V, and static power dissipation of 9.5 μW with load of 108 ΜΩ and 50 V power supply. Similarly, inverter with a representative TIPS-pentacene: polymer blend OFET shows a DC voltage gain of -8.7, swing of 44 V, and static power dissipation of 10.2 μW with the same load. For both neat TIPS-pentacene and TIPS-pentacene: polymer blend inverters, maximum DC gain and voltage swing are achieved with highest value of resistive load. However, switching thresholds near VDD/2 are obtained with moderate resistive loads. © 2016 IEEE.

2016 3rd International Conference on Emerging Electronics, ICEE 2016

TIPS-pentacene:Polymer blend inverters with improved gain

We report highly hydrogen selective Pd contacted ZnO nanorods based sensor detecting low concentration even at low operating temperature of 50 °C. The sensor performance was investigated for various gases such as H2, CH4, H2S and CO2 at different operating temperatures from 50 °C to 175 °C for various gas concentrations ranging from 7 ppm to 10,000 ppm (1%). The sensor is highly efficient as it detects hydrogen even at low concentration of ∼7 ppm and at operating temperature of 50 °C. The sensor's minimum limit of detection and relative response at 175 °C were found 7 ppm with ∼38.7% for H2, 110 ppm with ∼6.08% for CH4, 500 ppm with ∼10.06% for H2S and 1% with ∼11.87% for CO2. Here, Pd exhibits dual characteristics as metal contact and excellent catalyst to hydrogen molecules. The activation energy was calculated for all the gases and found lowest ∼3.658 kJ/mol for H2. Low activation energy accelerates desorption reactions and enhances the sensor's performance.