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Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTs
V. Joshi, B. Shankar, , M. Shrivastava
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 2017-September
Pages: 109 - 112
For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly. © 2017 The Japan Society of Applied Physics.
About the journal
JournalData powered by TypesetInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo