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Dependence of avalanche breakdown on surface & buffer traps in AlGaN/GaN HEMTsPublished in Institute of Electrical and Electronics Engineers Inc.
2017
Volume: 2017-September
Pages: 109 - 112
For the very first time, influence of traps on avalanche breakdown of AlGaN/GaN HEMTs is discussed. Impact of surface and bulk traps on breakdown voltage and device scaling is discussed with associated physics. Surface trap's were found to cause distinct breakdown characteristics with breakdown point varying from gate edge to drain edge, depending on nature, type and concentration. Buffer traps too influence the electric field near gate edge and leakage through the device, thereby affecting breakdown voltage accordingly. © 2017 The Japan Society of Applied Physics.
Topics: Avalanche diode (63)%63% related to the paper, Avalanche breakdown (63)%63% related to the paper, Time-dependent gate oxide breakdown (62)%62% related to the paper and Breakdown voltage (59)%59% related to the paper
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About the journal
| Journal | Data powered by TypesetInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD |
|---|---|
| Publisher | Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc. |
| ISSN | 1946-1569 |
| Open Access | No |
Authors (1)
Shree Prakash Tiwari- Department of Electrical Engineering IIT Jodhpur
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