Department of Electrical Engineering

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IIT Jodhpur

A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement. © 1963-2012 IEEE.

World University root node

IEEE Transactions on Electron Devices

BSIM-HV: High-Voltage MOSFET Model including Quasi-Saturation and Self-Heating Effect

This paper demonstrates the design of a dual-band substrate integrated coaxial line (SICL) balun operating at 6 GHz and 28 GHz for 5G application. The proposed design is realized using open-ended coaxial stubs with shielding. The performance of the dual-band SICL configuration is analyzed and range of realizable frequency ratios is determined from the analytically derived equations. The designed SICL based balun demonstrates low amplitude and phase imbalance in both the desired bands with good inter-band suppression making it worthy for practical applications. A fractional bandwidth of 17.6% and 3.97% at 6 GHz and 28 GHz band respectively is achieved by the proposed balun covering 0.43?g × 0.68?g circuit area. The electromagnetic robustness and wide-band single mode TEM characteristics of the proposed SICL based dual-band balun makes it a befitting option to deploy in millimeter-wave range. © 2018 IEICE

Asia-Pacific Microwave Conference Proceedings, APMC

A substrate integrated coaxial line dual-band balun for 5G applications

This paper presents Ka- band bias tee network designed in a Substrate Integrated coaxial line environment. The proposed circuit operates in the frequency range 31-35 GHz. A series of butterfly stub is used to realize inductor. To implement capacitor, interdigital structure is introduced in the middle layer of SICL. The size of this proposed circuit design is 1.1 \lambda\mathrm{g}\times 0.72 \lambda\mathrm{g}, where \lambda\mathrm{g} is guided wavelength at centre frequency of 33 GHz. The proposed results exhibit 0.1 dB insertion loss along with DC isolation 22dB with good impedance matching. The proposed circuit is very much suitable for Ka band active components application. © 2019 IEEE.

IEEE Region 10 Annual International Conference, Proceedings/TENCON

Compact Ka band Bias Tee Network Using Substrate Integrated Coaxial Line technology

In this paper, a novel concept to implement millimeterwave substrate integrated waveguide-based circuits for chipless identification application has been demonstrated. The proposed design utilizes a pair of compact half mode SIW cavity to encode the interrogating signal and resend the signal through the open-end aperture of the cavity. Thus, the encoding resonator itself has been utilized as radiator of the interrogating signal which helps to improve the compactness of the design. The complete design has been realized in K band making physical size of the circuit very small which makes it attractive for practical application. © 2019 URSI. All rights reserved.

2019 URSI Asia-Pacific Radio Science Conference, AP-RASC 2019

Design of SIW based millimeter wave chipless identification tag for low cost application

The Tactile Internet will enable users to physically explore remote environments and to make their skills available across distances. An important technological aspect in this context is the acquisition, compression, transmission, and display of haptic information. In this paper, we present the fundamentals and state of the art in haptic codec design for the Tactile Internet. The discussion covers both kinesthetic data reduction and tactile signal compression approaches. We put a special focus on how limitations of the human haptic perception system can be exploited for efficient perceptual coding of kinesthetic and tactile information. Further aspects addressed in this paper are the multiplexing of audio and video with haptic information and the quality evaluation of haptic communication solutions. Finally, we describe the current status of the ongoing IEEE standardization activity P1918.1.1 which has the ambition to standardize the first set of codecs for kinesthetic and tactile information exchange across communication networks. © 1963-2012 IEEE.

Fulltext

Proceedings of the IEEE

Haptic codecs for the tactile internet

In this work, a combination of a thin layer of Copper (II) phthalocyanine (CuPc) and TIPS-pentacene crystal was used to enhance the photo-sensing spectrum of photo- sensitive organic field-effect transistors (photo-OFETs). In TIPS-pentacene/CuPc bi-layer devices, the different conduction path not only reduced the total number of traps but also enhanced the sensing spectrum. It was found that, though the TIPS-pentacene was able to sense only blue and green colour well, and CuPc was able to sense only red and green colour well; the TIPS-pentacene/CuPc bi-layer were able to sense all three colors, enhancing the range of sensing. On illumination, bi-layer TIPS-pentacene/CuPc OFETs exhibited higher values of shift in threshold voltage (|ΔV TH |) compared to neat TIPS-pentacene and bare CuPc OFETs, due to change in the spatial distribution in the trap state density and associated pattern of trapping of photo-generated charge carriers. It was also found that the values of photo-responsivity (R max ) and photo-detection time for the bi-layer OFETs were in between that for OFETs with TIPS-pentacene or CuPc. © 2019

Synthetic Metals

TIPS-pentacene/Copper (II) phthalocyanine bi-layer photo sensitive organic field-effect transistors

High-performance operationally stable organic field-effect transistors were successfully fabricated on a PowerCoat HD 230 paper substrate with a TIPS-pentacene:polystyrene blend as the active layer and poly(4-vinylphenol)/HfO 2 as the hybrid gate dielectric. The fabricated devices exhibited excellent p-channel characteristics with a maximum and av field effect mobility of 0.44 and 0.22(±0.11) cm 2 V -1 s -1 , respectively, av threshold voltage of 0.021(±0.63) V, and current on-off ratio of â10 5 while operating at â'10 V. These devices exhibited remarkable stability under effects of gate bias stress and large number of repeated transfer scans with negligible performance spread. In addition, these devices displayed very stable electrical characteristics after long exposure periods to humidity and an excellent shelf life of more than 6 months in ambient environment. Thermal stress at high temperatures however deteriorates the device characteristics because of the generation and propagation of cracks in the active semiconductor crystals. Furthermore, novel paper-based phototransistors have been demonstrated with these devices. © 2019 American Chemical Society.

ACS Applied Materials and Interfaces

Solution-Processed Organic Field-Effect Transistors with High Performance and Stability on Paper Substrates

Physics behind the improvement in breakdown voltage of AlGaN/GaN HEMTs with carbon-doping of GaN buffer is discussed. Modeling of carbon as acceptor traps and self-compensating acceptor/donor traps is discussed with respect to their impact on avalanche breakdown. Impact of carbon behaving as a donor as well as acceptor traps on electric field relaxation and avalanche generation is discussed in detail to establish the true nature of carbon in GaN that delays the avalanche action. This understanding of the behavior of carbon-doping in GaN buffer is then utilized to discuss design parameters related to carbon doped buffer. Design parameters such as undoped channel thickness and relative trap concentration induced by carbon-doping are discussed with respect to the performance metrics of breakdown voltage, leakage current, sheet charge density, and dynamic ON-resistance. © 1963-2012 IEEE.

Part I: Physical Insight into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

Optical packet switching is an upcoming and promising technology that can be used in optical data centers and in next generation data transfer due to the enormous bandwidth of optical fiber. In recently proposed OPS design to resolve contention among packets fiber delay lines (FDLs) based buffering is preferred choice. In this paper. a dual buffer based optical packet switch design is proposed, where buffer sizes are chosen intelligently thus allowing storage of large number of contending packets within limited buffer storage. Hence, using a limited number of FDLs very low packet loss rate is possible.Through simulations, it has been shown that at the load of ``0.9{''} a very' low packet loss rate of the order of ``10(-)(10){''} is possible.To the best of our knowledge, this is the lowest packet loss rate using FDLs till date in any switch design.The proposed switch design is also compared with recently published designs to prove its superiority over other designs. The analysis of the switch is done in terms of power budget analysis, cost analysis, and packet loss performance under different buffering conditions.

JOURNAL OF ENGINEERING RESEARCH

Dual buffers optical based packet switch incorporating arrayed waveguide gratings

This paper demonstrates a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd2+) sensor with mercaptopropionic acid (MPA) and glutathione (GSH) functionalization. The sensing response of the sensor was analyzed by detecting Cd2+ ions at different concentrations. The AlGaN/GaN HEMT sensor exhibits excellent response with the sensitivity of 0.241 μ A /ppb, a fast response time of 3 s, and a lower detection limit of 0.255 ppb. The observed lower detection limit is significantly lower than the World Health Organization (WHO) standard recommended limit for Cd2+ ions in drinking water. Furthermore, the sensor showed good selectivity of Cd2+ ions toward other heavy metal ions. The results indicate that the binding properties of GSH to Cd and the sensitivity of 2-D electron gas toward the variation of charges at the gate region make the device highly sensitive with rapid detection of Cd2+ ions. © 2001-2012 IEEE.