Header menu link for other important links
BSIM-HV: High-Voltage MOSFET Model including Quasi-Saturation and Self-Heating Effect
, C. Gupta, R. Goel, P. Kushwaha, Y.-K. Lin, M.-Y. Kao, J.-P. Duarte, H.-L. Chang, Y.S. Chauhan, S. SalahuddinShow More
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 66
Issue: 10
Pages: 4258 - 4263
A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.