A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the overlap capacitance due to the drift region as well as quasi-saturation effect. The model is symmetric and continuous, is validated with the TCAD simulations and experimental 35- and 90-V LDMOS and 40-V VDMOS transistors, and shows excellent agreement. © 1963-2012 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

C. Gupta

R. Goel

P. Kushwaha

Y.-K. Lin

M.-Y. Kao

J.-P. Duarte

H.-L. Chang

Y.S. Chauhan

S. Salahuddin

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BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect

IEEE Transactions on Electron Devices

BSIM-HV: High-Voltage MOSFET Model including Quasi-Saturation and Self-Heating Effect

Journal	Data powered by TypesetIEEE Transactions on Electron Devices
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	00189383