Department of Electrical Engineering

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We realized self-sealing fluidics channels with circular cross-sections having diameters ranging between 30 and 2000 nm on a 200 mm glass wafer through CMOS compatible processes. Lateral voids were narrowed and sealed with non-conformal plasma enhanced chemical vapour deposition (PECVD) of phospho silicate glass (PSG) along silicon oxide trenches on silicon wafers. Leveraging on the reflow properties of PSG, circular profiled-channels were formed after undergoing high temperature annealing. These devices were subsequently transferred onto a borosilicate glass substrate through anodic bonding, and a fully transparent microfluidic device was achieved with the complete removal of the handle silicon substrate. The process offers a means of integrating electrochemical and optical sensing on the same platform, for biological research. © IOP Publishing Ltd.

World University root node

Nanotechnology

Fabrication of self-sealed circular nano/microfluidic channels in glass substrates

65th DRC Device Research Conference

Silicon nanowire field effect devices by top-down CMOS technology

Pentacene Organic Field Effect Transistors are fabricated using polymethyl methacrylate (PMMA) as a gate dielectric on flexible polymeric substrates like the Indium tin oxide coated polyethylene terephthalate (ITO coated PET), and polyethylene napthalate (PEN) in top contact configuration. The ITO and aluminium (evaporated on PEN) act as the gate materials for the OFETs. The devices on ITO coated PET show electron mobility up to 0.07 cm2/V-s and the on/off ratios in the order of 103. © 2007 IEEE.

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Pentacene organic field effect transistors on flexible substrates with polymer dielectrics

Solution-processed n-type organic field-effect transistors (OFETs) based on the fullerene derivative {6}-1-(3-(2-thienylethoxycarbonyl)-propyl)-{5}-1-phenyl-[5,6]-C61 (TEPP) and phenyl-C61-butyric acid methyl ester (PCBM) in a multiring source/ drain structure are reported. Devices with TEPP show high electron mobility up to 7.8 × 10-2cm2/Vs in the saturation regime for bottom-contact OFETs with Au S/D electrodes with a solution-processed fullerene derivative. The on/off ratios reported in this letter, which are in the range of 105 - 106, are among the highest values reported for such devices. This mobility is always higher compared to PCBM devices prepared in identical conditions. The mobility of TEPP and PCBM increased with increasing temperatures in the range of 100-300 K with activation energy of 78 and 113 meV, respectively, which suggests that the thermally activated hopping of electrons is dominant in TEPP. © 2007 IEEE.

IEEE Electron Device Letters

Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivatives

In this paper, the problem of modelling and output feedback control design for a smart structural system using piezoelectric material as a sensor/actuator is addressed. The model for a smart cantilever beam is developed by the finite element method. State space models for a smart cantilever beam with a single sensor/actuator for three different sensor/actuator locations are obtained. The fast output sampling feedback control is designed to control the first two vibration modes for each sensor/actuator location and its performance is evaluated.

Control and Intelligent Systems

Design of fast output sampling feedback control for smart structure model

This paper presents a design of continuous-time sliding mode control for the higher order systems via reduced order model. It is shown that a continuous-time sliding mode control designed for the reduced order model gives similar performance for the higher order system. The method is illustrated by numerical examples. The paper also introduces a technique for design of a sliding surface such that the system satisfies a cost-optimality condition when on the sliding surface. © 2007 Institute of Automation, Chinese Academy of Sciences.

International Journal of Automation and Computing

Sliding mode control design via reduced order model approach

Recent inventions in VLSI technology lead IT consumer market to be prepared for business of new products everyday. With these tech-advancements, a new motherboard is designed for every release of a new processor in the form of fixed ASIC thus makes the old motherboards useless. This leads to two big problems of E-waste as well as Technology upgradation cost. To overcome these problem, authors have already proposed Three-Tier architecture for the computer processors that introduces a Reconfigurable Master Processor in FPGA, controling all other old technology processors. This uses a smart OS named kshtizindial-OS (KIOS), at higher tier, Reconfigurable FPGA (Master Processor) at middle tier and the old processors at lower tier. This architecture emphasizes on an innovative concept of a very smart and auto-reconfigurable Operating System, KIOS with a reconfigurable CPU in FPGA that controls and reuses the old processors. The KIOS will incorporate the feature of soft-reconfiguration or auto-updation such that it can be able to reconfigure the FPGA as per the need of new release. All the tasks in the three tier architecture of KIOS is managed and interfaced for user by an application cum system software. Serially, these all tasks are presented here by a seven step process. This new architecture also contains new techniques of implementation for main memory, cache memory, bus architectures data and address mapping, multiprocessor scheduling and clock management. © 2007 IEEE.

Proceedings of the 15th International Conference on Advanced Computing and Communications, ADCOM 2007

Soft-reconfiguration management for operating systems with multiprocessor architecture

Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide- semiconductor-compatible silicon nanowires (SiNWs) with crown ethers covalently immobilized on their surface are presented. A densely packed organic monolayer terminated with amine groups is introduced to the SiNW surface via hydrosilylation. Amine-modified crown ethers, acting as sensing elements, are then immobilized onto the SiNWs through a cross-linking reaction with the monolayer. The crown ether-functionalized SiNWs recognize Na+ and K+ according to their complexation ability to the crown ethers. The SiNW sensors are highly selective and capable of achieving an ultralow detection limit down to 50 nM, over three orders of magnitude lower than that of conventional crown ether-based ion-selective electrodes. © 2007 American Institute of Physics.

Fulltext

Applied Physics Letters

Highly sensitive sensors for alkali metal ions based on complementary-metal-oxide-semiconductor-compatible silicon nanowires

This paper reports on the enhancements introduced into the ITC-irst RF MEMS multi-user fabrication process, which have been assessed by means of the electromechanical characterization of a set of test structures consisting of low actuation voltage capacitive switches. A simple quasistatic CV measurement has been used to extract the switch capacitance in both the on and off states (Con and Coff) and the voltage needed for the actuation of the different designs. The devices under test use folded serpentine springs and large area actuation electrodes to decrease the pull-in voltage. The spring constant of the suspensions is used to control the actuation voltage of the different designs with a slight increase of the overall size and without affecting the switching performance at higher frequencies. The introduction of a floating metal layer into the flow of the fabrication process has allowed a great increase in the off state capacitances, getting Coff/Con ratios up to 10 times greater than the ones obtained for the same structures without this feature. © 2007 Elsevier B.V. All rights reserved.

Microelectronic Engineering

Electromechanical characterization of low actuation voltage RF MEMS capacitive switches based on DC CV measurements

This paper considers a robust sliding mode control scheme using multirate output feedback. Using different plant output rates including the former plant output information, sampling error at multiple sampling interval is considered to discrete-time output feedback control design. As a result, control performance can be improved. Meanwhile, the multirate output feedback can also guarantee closed-loop system stability. © 2007 IEEE.