Department of Electrical Engineering

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IIT Jodhpur

Dodecyl benzene sulphonic acid (DBSA) doped polyaniline (PANI) nanorods have been synthesized by a templateless route via in-situ emulsion polymerization of aniline in aqueous DBSA solution. XRD patterns, UV-Visible Spectroscopy, and FTIR analysis confirm the formation of PANI and PANI-DBSA, whereas FESEM images revealed their elongated rod shaped morphology. The chloroform dispersion of synthesized PANI-DBSA was spin coated over prefabricated interdigitated Pt patterned glass substrate to realize porous gas sensing active layer. The sensor displays good response in 1-1200 ppm ammonia concentration range and can repeatedly detect 300 ppm of ammonia with response time of 6 s, recovery time of 37 s and relative response value of 9.57. Besides, its response was found to be linear for 1-50 ppm ammonia concentration with relative response per ppm value of 0.01675. © 2013 IEEE.

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Improved ammonia sensing by solution processed dodecyl benzene sulfonic acid doped polyaniline nanorod networks

In this work, Hilbert-Huang Transform (HHT) is applied for fast detection and location of faults using quarter cycle post fault current information, measured at the secondary of the substation transformer. Empirical Mode Decomposition (EMD) is carried out over a moving window to obtain first level residue, on which Hilbert Transform (HT) is applied in order to obtain the instantaneous attributes. Standard deviations of instantaneous frequency (SDIF), amplitude (SDIA) and average value of residue (AVR) are obtained for computing fault location indices. A tree like logic flow is implemented by comparing these indices with thresholds to identify the zone of fault and subsequently the exact fault location. The proposed algorithm has been implemented for IEEE 13 bus distribution system using MATLAB. Various case studies involving changes in fault type, fault incidence angle, bus location, fault resistance have been carried out in order to establish the proposed algorithm. It has also been established that the protection algorithm is not affected by non faulty transients such as switching of compensating equipment. © 2019 IEEE.

2019 IEEE 16th India Council International Conference, INDICON 2019 - Symposium Proceedings

Fast protection scheme for distribution system using hilbert-huang transform

A novel method based on constellation structure is proposed to identify PSK and QAM modulation of different orders, in the slow and flat fading channel. The proposed method does not require training for threshold optimization and considers carrier frequency, symbol rate, and phase offset unknown. The symbol rate is estimated using the spectrum of the instantaneous phase of the complex baseband signal. Carrier frequency offset (CFO) is estimated and corrected from the downconverted signal and downsampled to the estimated symbol rate for extraction of constellation points. The phase offset is determined based on the symmetrical structure of constellation. The features extracted using k-medoids are used for classification of the final modulation scheme. Results show that the proposed algorithm outperforms some existing classifiers and offers lower computational complexity compared to algorithms based on subtractive clustering. © 1997-2012 IEEE.

IEEE Communications Letters

Blind Signal PSK/QAM Recognition Using Clustering Analysis of Constellation Signature in Flat Fading Channel

In this paper, we study the physical layer secrecy performance of a hybrid satellite and free-space optical (FSO) cooperative system. The satellite links are assumed to follow the shadowed-Rician fading distribution, and the channel of the terrestrial link between the relay and destination is assumed to experience the gamma-gamma fading. For the FSO communications, the effects of different types of detection techniques (i.e., heterodyne detection and intensity modulation with direct detection) as well as the pointing error are considered. We derive exact analytical expressions for the average secrecy capacity and secrecy outage probability (SOP) for both cases of amplify-and-forward (AF) and decode-and-forward (DF) relaying. The asymptotic analysis for the SOP is also conducted to provide more insights on the impact of FSO and satellite channels on secrecy performance. It is found that with the AF with fixed gain scheme, the secrecy diversity order of the investigated system is only dependent on the channel characteristics of the FSO link and the FSO detection type, whereas the secrecy diversity is zero when the relay node employs DF or AF with variable-gain schemes. © 2009-2012 IEEE.

IEEE Photonics Journal

Physical layer security of hybrid satellite-FSO cooperative systems

This letter investigates the secrecy performance of the classical Wyner's wiretap model, where the main channel and eavesdropper channel experience correlated alpha-mu fading. Novel and exact expressions for the average secrecy capacity and secrecy outage probability are derived for the considered realistic scenario. The effect of correlation has been studied on the secrecy performance. Useful insights into the system performance are obtained through the asymptotic analysis.

IEEE COMMUNICATIONS LETTERS

Secrecy Performance of Correlated alpha-mu Fading Channels

Polycrystalline Aluminum Nitride (AlN) thin films are of significant interest due to their pyroelectric properties for last few years. In this paper, study on development of a polycrystalline AlN thin film based bulk micromachned pyroelectric IR sensor is presented. Structural optimization of IR sensor has been carried out using 3D finite element modeling (FEM) and simulations. A 1.0 μm thick thermally grown SiO2 layer used for thermal isolation, also serves as a diaphragm to hold the fabricated IR sensor. Rate of temperature change (dT/dt) of the sensor under dynamic heating is 0.12–0.15°K/s, and agrees well with the simulated value of 0.1°K/s. High pressure, N2 ambient sputtered Au film of thickness 160 nm has been used to enhance the IR absorptivity. IR absorptivity of sensor on medium to long wave (2.5–25 μm) radiations is nearly 67%, and creates thermal gradient of 0.23°K between sensor and substrate. Developed pyroelectric IR sensor exhibits response time 8.0 ms, pyroelectric coefficient (ρ) 0.32 × 10−4 C/m2K, ρ/ε figure of merit (FOM) 3.0 μC/m2K, and pyroelectric current responsivity (Ri) of 2.5 × 10-6 A/W. © 2019 Elsevier B.V.

Sensors and Actuators, A: Physical

MEMS AlN pyroelectric infrared sensor with medium to long wave IR absorber

Packaging is one of the most critical tasks for MEMS devices. Unlike solid state devices, MEMS structures involves moving structures which needs to be protected from outer environment ensuring free movement of the structure. In the present paper, inverted silicon cavity is used for capping the MEMS devices. However, in case of RF MEMS, silicon cavity would add parasitics and affects its electrical performance. Enclosing the MEMS structure, its mechanical response will also alter. The electrical as well as mechanical characteristics of the RF MEMS switch are analyzed using finite element method simulations. The electrical response of the fabricated switch after packaging is compared with unpackaged device. © 2018, Springer-Verlag GmbH Germany, part of Springer Nature.

Microsystem Technologies

Low temperature epoxy bonding for RF MEMS capacitive switch

Radio frequency micro-electro-mechanical system (RF MEMS) switch is basic component for transponders used in communication system. Switch “OFF/ON” capacitance ratio plays major role in controlling signal to noise ratio. Theoretically, with high dielectric constant material or floating metal concept, capacitance ratio can be improved up to 2000 or even more. Whereas, in most of the practical cases, measured ratio is less than 200. In present paper, RF MEMS capacitive switch LCR parameters are extracted considering parasitic capacitance to explain the mismatch of measured results. Parasitic capacitance is independent from device overlap area. Parasitic capacitance is function of switch geometry and directly proportional to dielectric constant of the substrate material. © 2019, The Korean Institute of Electrical and Electronic Material Engineers.

Transactions on Electrical and Electronic Materials

Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio

In this paper we propose a distributed locality sensitive hashing based framework for image super resolution exploiting computational and storage efficiency of cloud. Now days huge multimedia data is available on the cloud which can be utilized using store anywhere and excess anywhere model. It may be noted that super resolution is required for consumer electronics display devices due to various reasons. The propose framework exploits the image correlation for image super resolution using locality sensitive hashing (LSH) for manifold learning. In our work we have exploited the benefits of manifold learning for image super resolution, which in-turn is a highly time complex operation. The time complexity is involved due to finding the approximate nearest neighbors from trillion of image patches for locally linear embedding (LLE) operation. In our approach it is mitigated by using a distributed framework which internally uses hash tables for mapping of patches in the target image from a database of internet picture collection. The proposed framework for super resolution provides promising results in comparison to existing approaches. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

Department of Computer Science & Engineering

Department of Mechanical Engineering

Multimedia Tools and Applications

Image super resolution using distributed locality sensitive hashing for manifold learning

Lateral nanosheet field-effect-transistor (FET) is now targeting for 3nm CMOS technology node [1], [2]. It is important to see quantization effect at such confined geometry. In this work, we study the geometrical confinement effects in silicon nanosheet. We developed a unified phenomenological model for insulator capacitance (Cins) in rectangular (i.e., Nanosheet) cross-section gate-all-around (GAA) FET to solve the gate charge density accurately. It is observed that multi-subband conduction causes humps in higher order derivatives of charge vs gate voltage characteristics which may affect the performance of analog and RF circuits. © 2019 IEEE.