Department of Electrical Engineering

&ldquo;IIT Jodhpur is committed to impart quality education to facilitate the creation of qualified, competent and responsible human resources to meet the emerging technological challenges of the world. It is working towards creating an equitable learning platform that is positive, accessible and effective in the face of the modern societal and scientific advancements.

Flexibility in curriculum, in all its academic programs, encompassing elements of teaching, research, creativity, innovation and entrepreneurship is the most unique feature of IIT Jodhpur. The Department of Science and Technology (DST), under the National Mission on Cyber Physical Systems, has identified IIT Jodhpur as a Technology &amp; Innovation Hub in the area of Augmented Reality and Virtual Reality. The institute has also been nominated as the coordinator for the Jodhpur City and Knowledge Cluster by the Office of Principal Scientific Adviser, Government of India.

The sprawling 852-acre IIT Jodhpur campus is a majestic tribute to the deep-rooted diverse cultural heritage of the region. The campus is an architectural masterpiece, which is slated to become an international exemplar of sustainability with net-zero energy, and advanced water and waste management strategies.&rdquo;

IIT Jodhpur

A design of proximity coupled microstrip dipole antenna with enhanced bandwidth and gain is presented in this paper. Comparative study with coaxial fed design has been done. Also dual-frequency operation using proximity coupled microstrip dipole antenna is implemented with good bandwidth at both the frequencies. © 2011 IEEE.

World University root node

IEEE Antennas and Propagation Society, AP-S International Symposium (Digest)

Bandwidth enhancement of microstrip dipole using proximity coupling method

This paper introduces a technique for simultaneous decomposition of a non-autonomous singularly perturbed system into three subsystems namely slow, fast 1 and fast 2 respectively. Design of a composite controller in terms of the individual subsystem controllers is derived and the decomposition of the optimal control problem of the original high order system into three smaller order optimal control problems, with separate quadratic performance indexes extracted from the quadratic performance index of the original system, is discussed. The proposed technique is applied to the problem of spatial stabilization of Advanced Heavy Water Reactor (AHWR), which is a neutronically large reactor necessitating a control system to suppress xenon induced spatial oscillations. However the AHWR model, with eigenvalues falling in three distinct and widely separated clusters, is ill-conditioned defying even the application of two-time-scale decomposition. In this paper, the stability aspects of the AHWR are addressed, its three-time-scale properties are brought out and a state feedback regulator for spatial control is designed exploiting the three-time-scale property of the AHWR. © 2011 IEEE.

IEEE Transactions on Nuclear Science

A three-time-scale approach for design of linear state regulator for spatial control of advanced heavy water reactor

Indium nitride (InN) epilayers have been successfully grown by nitrogen-plasma-assisted molecular beam epitaxy (NPA-MBE) on Si (111) substrates using different buffer layers. Growth of a (0001)-oriented single crystalline wurtzite-InN layer was confirmed by high resolution X-ray diffraction (HRXRD). The Raman studies show the high crystalline quality and the wurtzite lattice structure of InN films on the Si substrate using different buffer layers and the InN/β-Si3N4 double buffer layer achieves minimum FWHM of E2 (high) mode. The energy gap of InN films was determined by optical absorption measurement and found to be in the range of ~ 0.73-0.78 eV with a direct band nature. It is found that a double-buffer technique (InN/β-Si3N4) insures improved crystallinity, smooth surface and good optical properties. © 2011 Elsevier B.V. All rights reserved.

Materials Letters

Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 ± 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of ∼ 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. © 2011 Elsevier B.V. All rights reserved.

Surface Science

Study of band offsets in InN/Ge heterojunctions

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Scripta Materialia

Structural and optical properties of nonpolar (1 1 -2 0) a-plane GaN grown on (1 -1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

Signal Integrity (SI) and Power Integrity (PI) are the most inportant characteristics for system level design, simulation and analysis of high speed systems. In this paper, HSLINK system is optimized for better SI and PI. Linear models for eye amplitude and jitter are derived by Design of Experiments (DOE). Cost effective solution strategy is also presented using linear models obtained. © 2011 IEEE.

Proceedings of the 12th International Symposium on Quality Electronic Design, ISQED 2011

Cost-effective optimization of serial link system for Signal Integrity and Power Integrity

Nanotechnology, such as nanoelectronic biosensors, is bringing new opportunities and tools to the studies of cell biology, clinical applications, and drug discovery. In this study, cyrstalline silicon nanowire based field-effect transistors fabricated using top-down approach were employed to parallelly detect pro-inflammatory cytokines in the complex biological fluids (cell culture medium and blood samples) with high specificity and femtomolar sensitivity. Using this technique, the dynamic secretion of TNF-alpha and IL6 was revealed during the immune response of macrophages and rats to the stimulation of bacteria endotoxin. This technique could provide a unique platform to examine the profile of complex immune responses for fundamental studies and diagnosis. © 2010 Elsevier B.V.

Biosensors and Bioelectronics

Nanoelectronic detection of triggered secretion of pro-inflammatory cytokines using CMOS compatible silicon nanowires

In the setting of computer vision algorithmic searches often aim to identify an object of interest inside large sets of images or videos. Towards reducing the often astronomical complexity of this search one can use pruning to filter out objects that are sufficiently distinct from the object of interest thus resulting in a pruning gain of an overall reduced search space. Motivated by practical computer vision based scenarios such as time-constrained human identification in biometric-based video surveillance systems we analyze the stochastic behavior of time-restricted search pruning over large and unstructured data sets which are furthermore random and varying and where in addition pruning itself is not fully reliable but is instead prone to errors. In this stochastic setting we apply the information theoretic method of types as well as information divergence techniques to explore the natural tradeoff that appears between pruning gain and reliability and proceed to study the typical and atypical gainreliability behavior giving insight on how often pruning might fail to substantially reduce the search space. The result as is applies to a plethora of computer vision based applications where efficiency and reliability are intertwined bottlenecks in the overall system performance and the simplicity of the obtained expressions allows for rigorous and insightful assessment of the pruning gain-reliability behavior in such applications as well as for intuition into designing general object recognition systems. {\textcopyright} 2011 IEEE.

Proceedings of the IEEE International Conference on Computer Vision

Search pruning in video surveillance systems: Efficiency-reliability tradeoff

A new discrete time super-twisting-like second order sliding mode algorithm (DSTA) is proposed. The stability proof of the suggested scheme is analyzed in terms of the discrete Lyapunov approach and Linear Matrix Inequalities (LMI) theory. Using these two tools it is proved that, system state trajectory is ultimately bounded in finite time. The state estimation problem for a class of second order discrete time system has been proposed to show the positive settings obtained from the algorithm introduced here. Also, the ultimate boundedness of the estimation error is demonstrated despite the presence of bounded perturbations. Simulation results illustrates the efficacy of this new discrete-time algorithm. © 2011 Intl Journal of Adv Mechatr.

2011 International Conference on Advanced Mechatronic Systems, ICAMechS 2011 - Final Program

Super-twisting-like algorithm in discrete time nonlinear systems

This paper presents a twisting like control algorithm for finite-time stabilization of triple integrator, thus providing an algorithm for sliding mode control of order three. The algorithm needs only signs of the switching function and its derivatives. The gains in the algorithm follow simple inequalities to give finite-time convergence of , and . Also, the conditions are derived for the uncertain double and triple integrators. © 2011 IEEE.