We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Mahesh Kumar

Department of Electrical Engineering

IIT Jodhpur

M.K. Rajpalke

B. Roul

T.N. Bhat

N. Sinha

S.B. Krupanidhi

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Scripta Materialia

Structural and optical properties of nonpolar (1 1 -2 0) a-plane GaN grown on (1 -1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

Journal	Scripta Materialia
ISSN	13596462