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Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodesPublished in
2011
DOI: 10.1063/1.3549685
Volume: 109
Issue: 4
InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively. © 2011 American Institute of Physics.
Topics: Schottky barrier (64)%64% related to the paper, Schottky diode (57)%57% related to the paper, Thermionic emission (52)%52% related to the paper, Semiconductor device (52)%52% related to the paper and Molecular beam epitaxy (50)%50% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. Journal of Applied Physics 109, 4 p044502-044502-5 (2011)] and may be found at https://doi.org/10.1063/1.3549685.
About the journal
| Journal | Journal of Applied Physics |
|---|---|
| ISSN | 00218979 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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