Department of Electrical Engineering

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IIT Jodhpur

In this paper, a compact electronically beam switchable leaky-wave antenna (LWA) based on TE20 mode substrate integrated waveguide (SIW) is proposed at X-band. The microstrip power divider-slotline transitions are utilized to excite TE20 mode SIW array in order to enhance the overall radiation capability of the designed structure. The tilted rectangular radiating slots with triangular amplitude variation are etched out on the top of SIW resulting in large bandwidth and low cross-polar level. Further, the single complementary split-ring resonator (CSRR) is placed on the bottom plane with four diodes. Depending on the biasing states of the diodes, the radiated fan beam is switched four different directions. The proposed antenna is working within the frequency range of 9 - 11.7 GHz (S11<-10dB) having the beam scanning range of 75o with a maximum gain of 14 dBi. © 2019 IEEE.

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2019 IEEE MTT-S International Microwave and RF Conference, IMARC 2019

Electronically beam switchable high gain leaky-wave antenna using TE20 mode substrate integrated waveguide for large beam scanning

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. © 2019 Elsevier Ltd. All rights reserved.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

Industry standard FDSOI compact model BSIM-IMG for IC design

A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal transient simulations and a small-signal ac analysis, is developed in this paper. An improved physical equivalent circuit, capturing NQS effects in the millimeter waveband, is derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network. The proposed model is implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer-aided design device simulations and experimental data. The proposed model is in very good agreement with the data up to {50}{f}-{t}. The transient currents, for a gate-voltage switching rate of {5}\times {10}^{{10}} V/s, show excellent match with the data. The dc, transient, and ac simulations using the proposed model are much faster than a 10-segmented MOSFET model. This shows that the proposed model is better than other computationally complex compact models, for most RF applications. © 1963-2012 IEEE.

IEEE Transactions on Electron Devices

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

We investigate the impact of inner fringing fields on the negative capacitance FinFET (NC-FinFET) and how this scales with the technology node. The 8-/7-nm technology node of the p-type body NC-FinFET is modeled using the Sentaurus technology-aided design (TCAD), which couples Poisson with Landau equations. It is found that the NC effect is beneficial for device scaling. The OFF current is well suppressed in short-channel devices (64.4% reduction at LG = 16 nm) because the inner fringing field induces negative gate charges and decreases the channel potential. For longer channel devices, the influence of inner fringing field disappears, and the depletion charges dominate the subthreshold characteristics. As reducing remnant polarization, the ON current is boosted (11.4% improvement at LG = 16 nm) for all lengths due to better matching between MOSFET and ferroelectric capacitances. In comparison with FinFET, the drain-induced barrier lowering of NC-FinFET is also well controlled (50% reduction at LG = 16 nm) due to the inner fringing field-induced gate charges, showing the scaling capability of NC-FinFET. Furthermore, a compact model to capture the spatial distribution of the inner fringing field is also proposed based on the Gaussian quadrature method, and it is validated with the TCAD simulated data with multiple gate lengths and remnant polarizations. © 2019 IEEE.

Analysis and modeling of inner fringing field effect on negative capacitance FinFETs

The non-monotonic DIBL behavior observed with variation in back gate voltage, in thick front gate oxide (FGOX) long channel FDSOI transistor is presented in this work. The physical origin of this behavior is the fringing field induced channel potential variation, from drain to drain side channel region, through thick FGOX for negative back bias, and through BOX for positive back bias. Additonally, we study the impact of channel length scaling on non-monotonic DIBL with variation in back gate voltage. © 2019 IEEE.

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019

Physical Analysis of Non-monotonic DIBL Dependence on Back Gate Bias in Thick Front Gate Oxide FDSOI MOSFETs

In this letter, we propose a new data-driven approach for haptic modeling of normal interactions on homogeneous viscoelastic deformable objects. The approach is based on a well-known machine learning technique: Random forest. Here, we employ a random forest for regression. We acquire discrete-time interaction data for many automated cyclic compressions of a deformable object. A random forest is trained to estimate a nonparametric relationship between the position and response forces. We train the forest on very simple normal interactions. Our results show that a model trained with just 10% of the training data is capable of modeling other unseen complex normal homogeneous interactions with good accuracy. Thus, it can handle large and complex datasets. In addition, our approach requires five times less training data than the standard approach in the literature to provide similar accuracy. © 2016 IEEE.

IEEE Robotics and Automation Letters

Data-driven haptic modeling of normal interactions on viscoelastic deformable objects using a random forest

Media technology, in particular video recording and playback, keeps improving to provide users with high-quality real and virtual visual content. In recent years, increasing the temporal sampling rate of videos and the refresh rate of displays has become one focus of technical innovation. This raises the question, how high the sampling and refresh rates should be? To answer this question, we determine the minimum temporal sampling rate at which a video should be presented to make temporal sampling imperceptible to viewers. Through a psychophysical study, we find that this minimum sampling rate depends on both the speed of the objects in the image plane and the exposure time of the recording camera. We propose a model to compute the required minimum sampling rate based on these two parameters. In addition, state-of-the-art video codecs employ motion vectors from which the local object movement speed can be inferred. Therefore, we present a procedure to compute the minimum sampling rate given an encoded video and camera exposure time. Since the object motion speed in a video may vary, the corresponding minimum frame rate is also varying. This is why the results of this paper are particularly applicable when used together with adaptive frame rate computer generated graphics or novel video communication solutions that drop insignificant frames. In our experiments, we show that videos played back at the minimum adaptive frame rate achieve an average bit rate reduction of 26% compared to constant frame rate playback, while perceptually no difference can be observed. © 1991-2012 IEEE.

IEEE Transactions on Circuits and Systems for Video Technology

On the Minimum Perceptual Temporal Video Sampling Rate and Its Application to Adaptive Frame Skipping

This chapter discusses the parameter extraction procedure of the BSIM-IMG model. Every model has its own flow and it is crucial to carefully understand that for parameter extraction. We consider several variables like temperature, geometry, biases, etc. to give a coherent picture of the parameter extraction method. © 2019 Elsevier Ltd. All rights reserved.

Parameter extraction with BSIM-IMG compact model

In this paper, analysis and design of a three-phase-isolated Cuk-based power factor correction (PFC) converter have been proposed. The proposed converter is operated in discontinuous output inductor current mode to achieve PFC at ac input. This avoids the inner current control loop which further eliminates the sensing of current. This makes the system more reliable and robust. The converter requires only one simple voltage control loop for output voltage regulation, and all the power switches are driven by the same gate signal which simplifies the gate driver circuit. The detailed operation of the converter and design calculations are presented. And also a small-signal model of the converter by using current injected equivalent circuit approach is presented to aid the controller design. The experimental results from a 2-kW laboratory prototype with 208-V line-to-line input voltage, 400-V output voltage are presented to confirm the operation of the proposed converter. An input power factor of 0.999, an input current total harmonic distortion of as low as 4.06%, and a high conversion efficiency of 95.1% are achieved from laboratory prototype. © 1986-2012 IEEE.

IEEE Transactions on Power Electronics

Three-Phase Single-Stage-Isolated Cuk-Based PFC Converter

The switched boost inverters are single stage topologies that boost dc voltage and convert it to required ac voltage. It requires lesser number of components and is more efficient compared to conventional two stage dc-dc-ac methods. The dc-ac conversion results in second order harmonic currents (SHCs) to be reflected at the source end. It causes various problems such as heating or failure of sources, oscillations in maximum power point tracking. The active or passive filters for SHCs may increase component count as well as increase overall cost of the system. In this paper, a sliding mode control based voltage and current control method method is proposed so as to reduce the SHCs in Switched Boost Inverter (SBI). Also, the transients during dc or ac load variations are kept within allowed range. This results in excellent voltage regulation during load changes. The proposed controller is validated through simulation for different types of load and upto 50 % load variations. © 2019 IEEE.