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Zn interstitial defects and their contribution as efficient light blue emitters in Zn rich ZnO thin films
C. Kumari, A. Pandey,
Published in Elsevier Ltd
2018
Volume: 735
   
Pages: 2318 - 2323
Abstract
Zinc oxide (ZnO) and zinc rich zinc oxide (Zn:ZnO) thin films are synthesized using vapor phase trapping assisted thermal chemical vapor deposition (CVD) process. X-ray diffraction measurements indicate the highly textured c-axis growth for Zn:ZnO thin films as compared to ZnO thin film structures. The observed insignificant change in lattice parameters suggests that excess Zn is in interstitial sites. The optical studies substantiate that the excess Zn in ZnO matrix is contributing to the point defects, with integrated luminescence towards the light blue color with respect to that for the pristine ZnO thin film. The electronic carrier concentration is about four orders of magnitude higher for Zn:ZnO thin films, causing Burstein-Moss shift of ∼0.13 eV in Zn:ZnO thin films. © 2017 Elsevier B.V.
About the journal
JournalData powered by SciSpaceJournal of Alloys and Compounds
PublisherData powered by SciSpaceElsevier Ltd
ISSN09258388
Open AccessNo