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Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stabilityPublished in American Institute of Physics Inc.
2021
DOI: 10.1063/5.0050448
Volume: 118
Issue: 26
Write once read many times (WORM) memory devices based on the resistive switching mechanism of a sputtered amorphous BaTiO3 (am-BTO) thin film in a metal-insulator-metal structure is fabricated on a FTO coated glass substrate with a silver top contact. Fabricated devices show the switching from a low-conductance state to a high-conductance state with the formation of conductive filament(s) in the am-BTO layer. The memory characteristics are investigated as a function of thickness of am-BTO layer, which is determined by varying the deposition time. Devices with all deposited thicknesses show data retention for more than 4000 s and 300 reading cycle. Devices with 180 nm thickness show a high on-off ratio on the order of 106. The fabricated WORM devices exhibit good reading-endurance and data-retention characteristics. © 2021 Author(s).
Publisher Copy Version
Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Write-once-read-many-times resistive switching behavior of amorphous barium titanate based device with very high on-off ratio and stability. Applied Physics Letters 118, 26 p263505 (2021)] and may be found at https://doi.org/10.1063/5.0050448.
About the journal
| Journal | Data powered by TypesetApplied Physics Letters |
|---|---|
| Publisher | Data powered by TypesetAmerican Institute of Physics Inc. |
| ISSN | 00036951 |
| Open Access | No |
Authors (1)
Satyajit Sahu- Department of Physics IIT Jodhpur
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