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Vertically stacked complementary inverters with solution-processed organic semiconductors
J.B. Kim, C. Fuentes-Hernandez, D.K. Hwang, , W.J. Potscavage Jr., B. Kippelen
Published in Elsevier B.V.
Volume: 12
Issue: 7
Pages: 1132 - 1136
We report on vertically stacked complementary inverters implemented with a solution-processed [6,6]-phenyl c61 butyric acid methyl ester (PCBM) n-channel thin-film transistor (TFT) fabricated on top of a 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and poly(triarylamine) (PTAA) blend p-channel TFT. With a shared common gate electrode positioned between two dielectric layers, bottom-contact p- and top-contact n-channel TFTs showed saturation mobility values of 0.25 and 0.004 cm2/V s and threshold voltages of -3.9, and 0.3 V, respectively. The inverter yielded a gain value of -24 V/V with a switching threshold voltage value of 3.3 V at a supply voltage of 7 V. This demonstration of the use of solution-processed semiconductors in a vertically stacked complementary inverter geometry is a step forward towards the development of low-cost complementary electronics. © 2011 Elsevier B.V. All rights reserved.
About the journal
JournalData powered by TypesetOrganic Electronics
PublisherData powered by TypesetElsevier B.V.