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Valence band offset at GaN/β-Si 3N 4 and β-Si 3N 4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy
, B. Roul, T.N. Bhat, M.K. Rajpalke, A.T. Kalghatgi, S.B. Krupanidhi
Published in
Volume: 520
Issue: 15
Pages: 4911 - 4915
Ultra thin films of pure β-Si 3N 4 (0001) were grown on Si (111) surface by exposing the surface to radio- frequency nitrogen plasma with a high content of nitrogen atoms. Using β-Si 3N 4 layer as a buffer layer, GaN epilayers were grown on Si (111) substrate by plasma-assisted molecular beam epitaxy. The valence band offset (VBO) of GaN/β-Si 3N 4/Si heterojunctions is determined by X-ray photoemission spectroscopy. The VBO at the β-Si3N4 / Si interface was determined by valence-band photoelectron spectra to be 1.84 eV. The valence band of GaN is found to be 0.41 ± 0.05 eV below that of β-Si 3N 4 and a type-II heterojunction. The conduction band offset was deduced to be ~ 2.36 eV, and a change of the interface dipole of 1.29 eV was observed for GaN/β-Si 3N 4 interface formation. © 2012 Elsevier B.V. All rights reserved.
About the journal
JournalThin Solid Films