A unified compact model for gate-all-around (GAA) FETs is discussed. This single unified model can accurately model different shapes of GAA FETs. In this work, we present its validation with the reported GAA FETs: stacked GAA nanosheet, stacked nanowire MOS-FETs, Multi-bridge-channel MOSFETs and Twin silicon nanowire MOSFETs. This study shows that the BSIM-CMG unified multi-gate MOSFET model is ready for production design of silicon GAA based circuits and technology-product co-development for future technology nodes. © 2018 by TechConnect. All rights reserved.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

J.P. Duarte

Y.-K. Lin

H.-L. Chang

A. Sachid

Y.S. Chauhan

S. Salahuddin

C. Hu

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TechConnect Briefs 2018 - Advanced Materials

Unified compact model for gate all around fets-nanosheets, nanowires, multi bridge channel MOSFETs

Journal	TechConnect Briefs 2018 - Advanced Materials
Publisher	TechConnect