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Unified compact model covering drift-diffusion to ballistic carrier transport
S. Khandelwal, , P. Kushwaha, J.P. Duarte, A. Medury, Y.S. Chauhan, S. Salahuddin, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 37
Issue: 2
Pages: 134 - 137
In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier degeneracy effects in ballistic transport. The model is implemented into the industry standard compact models for FinFETs, fully depleted silicon-on-insulator (FDSOI) devices and bulk MOSFETs: 1) Berkeley Spice model for common multi-gate; 2) Berkeley Spice model for independent multi-gate; and 3) BSIM6. The model is validated with experimental data and TCAD simulations for FDSOI devices, FinFETs, and bulk MOSFETs. © 1980-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.