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Thermoelectric Properties of the XCoSb (X: Ti,Zr,Hf) Half-Heusler alloys
, U. Schwingenschlögl
Published in Wiley-VCH Verlag
Volume: 254
Issue: 11
We investigate the thermoelectric properties of the half-Heusler alloys XCoSb (X: Ti,Zr,Hf) by solving Boltzmann transport equations and discuss them in terms of the electronic band structure. The rigid band approximation is employed to address the effects of doping. While many half-Heuser alloys show excellent thermoelectric performance, the materials under study are special by supporting both n- and p-doping. We identify the reasons for this balanced thermoelectric transport and explain why experimentally p-doping is superior to n-doping. We also determine the spectrum of phonon mean free paths to guide grain refinement methods to enhance the thermoelectric figure of merit. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
About the journal
JournalData powered by TypesetPhysica Status Solidi (B) Basic Research
PublisherData powered by TypesetWiley-VCH Verlag