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Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substratePublished in
2011
DOI: 10.1063/1.3651762
Volume: 99
Issue: 15
InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300 K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. © 2011 American Institute of Physics.
Topics: Quantum dot (53)%53% related to the paper, Epitaxy (52)%52% related to the paper, Silicon nitride (52)%52% related to the paper, Wide-bandgap semiconductor (52)%52% related to the paper and Potential well (51)%51% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate. Applied Physics Letters 99, 15 p153114 (2011)] and may be found at https://doi.org/10.1063/1.3651762.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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