Get all the updates for this publication
Articles
Temperature dependent transport behavior of n -InN nanodot/p-Si heterojunction structuresPublished in
2010
DOI: 10.1063/1.3517489
Volume: 97
Issue: 20
The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si (100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p -Si(100) substrates. These dots were found to be single crystalline and grown along [001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be Δ E C =1.8 eV and Δ EV =1.3 eV and are in close agreement with Anderson's model. © 2010 American Institute of Physics.
View more info for "Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures"
Publisher Copy Version
Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Temperature dependent transport behavior of n-InN nanodot/p-Si heterojunction structures. Applied Physics Letters 97, 20 p202107 (2010)] and may be found at https://doi.org/10.1063/1.3517489.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
- On the study of phase and dimensionally controlled titania nanostructures synthesis at sub-zero temperatures
- Visualization of band offsets at few-layer MoS2/Ge heterojunction
- Davydov splitting, resonance effect and phonon dynamics in chemical vapor deposition grown layered MoS2
- Detection of cadmium ions Byg-C3N4 functionalization on AlGaN/ GaN high electron mobility transistor
