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Temperature dependent transport behavior of n -InN nanodot/p-Si heterojunction structures
T.N. Bhat, B. Roul, M.K. Rajpalke, , S.B. Krupanidhi, N. Sinha
Published in
Volume: 97
Issue: 20
The present work explores the temperature dependent transport behavior of n-InN nanodot/p-Si (100) heterojunction diodes. InN nanodot (ND) structures were grown on a 20 nm InN buffer layer on p -Si(100) substrates. These dots were found to be single crystalline and grown along [001] direction. The junction between these two materials exhibits a strong rectifying behavior at low temperatures. The average barrier height (BH) was determined to be 0.7 eV from current-voltage-temperature, capacitance-voltage, and flat band considerations. The band offsets derived from built-in potential were found to be Δ E C =1.8 eV and Δ EV =1.3 eV and are in close agreement with Anderson's model. © 2010 American Institute of Physics.
About the journal
JournalApplied Physics Letters