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Structural characterization and ultraviolet photoresponse of GaN nanodots grown by molecular beam epitaxy
, B. Roul, T.N. Bhat, M.K. Rajpalke, S.B. Krupanidhi
Published in
Volume: 5
Issue: 8
The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330A/W with an external quantum efficiency of 1100%. © 2012 The Japan Society of Applied Physics.
About the journal
JournalApplied Physics Express