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Structural characterization and ultraviolet photoresponse of GaN nanodots grown by molecular beam epitaxyPublished in
2012
Volume: 5
Issue: 8
The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330A/W with an external quantum efficiency of 1100%. © 2012 The Japan Society of Applied Physics.
Topics: Molecular beam epitaxy (55)%55% related to the paper, Wurtzite crystal structure (53)%53% related to the paper and Nanodot (52)%52% related to the paper
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Postprint Version
Content may be subject to copyright.This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Exp... ...This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1143/APEX.5.085202
About the journal
| Journal | Applied Physics Express |
|---|---|
| ISSN | 18820778 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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