Header menu link for other important links
X
Strong plasmon absorption in InN thin films
, C. Sudakar, J.S. Thakur, K. Padmanabhan, S. Kumar, R. Naik, V.M. Naik, G. Lawes
Published in
2009
Volume: 105
   
Issue: 5
Abstract
We have fabricated InN thin films using rf magnetron sputtering from an indium (In) metal target. Optical and electrical measurements show that these as-grown films are n -type with carrier concentrations ranging from 10 20 to 1021 cm-3. This variation in carrier density is produced by controlling the conditions during the deposition. We used Rutherford backscattering spectrometry to identify possible sources for n -type carriers. We found that in addition to strong direct bandgap optical absorption ranging from 1.4 to 2.0 eV, a large plasmon absorption peak in the infrared region (0.45-0.8 eV) is also observed. This tunable IR absorption suggests that these highly degenerate InN films could be used for a number of applications, including optical filters and infrared devices. © 2009 American Institute of Physics.
About the journal
JournalJournal of Applied Physics
ISSN00218979