In this paper a new approach based on silicon shadow mask has been reported to realize metal-carbon nanotubes (CNTs) contacts in end-contact configuration, which provides low-ohmic and stable contacts than that of side-contacted configuration. The source and drain contacts were fabricated by placing the fabricated silicon shadow mask over the single walled CNTs (SWNTs) coated wafer followed by deposition of Cr/Au∼100nm/500 nm using e-beam evaporation. The SEM image clearly shows the end-contacts of individual SWNTs with the gold electrodes. Further, Keithley SCS 4200 parameter analyzer was used to perform electrical characterization of the fabricated devices. The calculated ION/IOFF ratio and threshold voltage of the typically shown device are ∼120 and∼290 mV respectively. © 2018 Author(s).