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Stable metal-CNT contacts using shadow mask technique for CNTFET fabrication
P.B. Agarwal, A.K. Singh,
Published in American Institute of Physics Inc.
Volume: 1989
In this paper a new approach based on silicon shadow mask has been reported to realize metal-carbon nanotubes (CNTs) contacts in end-contact configuration, which provides low-ohmic and stable contacts than that of side-contacted configuration. The source and drain contacts were fabricated by placing the fabricated silicon shadow mask over the single walled CNTs (SWNTs) coated wafer followed by deposition of Cr/Au∼100nm/500 nm using e-beam evaporation. The SEM image clearly shows the end-contacts of individual SWNTs with the gold electrodes. Further, Keithley SCS 4200 parameter analyzer was used to perform electrical characterization of the fabricated devices. The calculated ION/IOFF ratio and threshold voltage of the typically shown device are ∼120 and∼290 mV respectively. © 2018 Author(s).
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JournalData powered by TypesetAIP Conference Proceedings
PublisherData powered by TypesetAmerican Institute of Physics Inc.