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Solution-processed molecular bis(naphthalene diimide) derivatives with high electron mobility
L.E. Polander, , L. Pandey, B.M. Seifried, Q. Zhang, S. Barlow, C. Risko, J.-L. Brédas, B. Kippelen, S.R. Marder
Published in
Volume: 23
Issue: 15
Pages: 3408 - 3410
Top-gate bottom-contact field-effect transistors based on solution-processed films of molecules in which two naphthalene-1,8:4,5- bis(dicarboxdiimide)s are bridged by thieno[3,2-b]thiophene, dithieno[3,2-b:2′,3′-d]thiophene and dithieno[3,2-b:2′, 3′-d]pyrrole exhibit electron mobility values of up to 1.5 cm2 V-1 s-1. © 2011 American Chemical Society.
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JournalChemistry of Materials