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Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopyPublished in
2011
DOI: 10.1063/1.3665639
Volume: 110
Issue: 11
InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model. © 2011 American Institute of Physics.
Topics: Scanning tunneling spectroscopy (61)%61% related to the paper, Scanning tunneling microscope (57)%57% related to the paper, Molecular beam epitaxy (56)%56% related to the paper, Quantum dot (52)%52% related to the paper and Wurtzite crystal structure (52)%52% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy. Journal of Applied Physics 110, 11 p114317 (2011)] and may be found at https://doi.org/10.1063/1.3665639.
About the journal
| Journal | Journal of Applied Physics |
|---|---|
| ISSN | 00218979 |
Authors (1)
Mahesh Kumar- Department of Electrical Engineering IIT Jodhpur
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