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Silicon nanowires formation in CMOS compatible manner
, N. Balasubramanian, N. Ranganathan, R. Kumar
Published in World Scientific Publishing Co. Pte Ltd
Volume: 5
Issue: 4-5
Pages: 445 - 451
We present CMOS compatible fabrication technique for silicon nanowire (SiNW) on bulk silicon wafers. Our method uses saw-tooth etch-profiles of fins followed by self-limiting oxidation to form vertically self-aligned horizontal SiNW down to 5 nm diameter. The concept of modifying the cross-section shape of SiNW from triangular to circular and the ability to achieve desired nanowire diameter are unique in this work. Nanowires formed by such technique can be utilized to realize several nanoelectronics devices like gate-all-around transistor, single-electron-transistor, etc.; NEMS and bio-medical sensors; all in a CMOS friendly manner. The physical and electrical characterization of the SiNW is also presented in this paper. © World Scientific Publishing Company.
About the journal
JournalInternational Journal of Nanoscience
PublisherWorld Scientific Publishing Co. Pte Ltd