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Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy
, T.N. Bhat, M.K. Rajpalke, B. Roul, P. Misra, L.M. Kukreja, N. Sinha, A.T. Kalghatgi, S.B. Krupanidhi
Published in
Volume: 33
Issue: 3
Pages: 221 - 226
Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed. © Indian Academy of Sciences.
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JournalBulletin of Materials Science