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Robust room temperature ferromagnetism in epitaxial CoO thin film
, B Loukya, K Dileep, R Sahu, K Nagaraja K, N Kumar, R Datta
Published in
2013
Volume: 103
   
Issue: 24
Abstract
Co vacancy (VCo) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm3 and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L3/L2 white line ratio) and this is due to the V Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of VCo and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases. © 2013 AIP Publishing LLC.
About the journal
JournalApplied Physics Letters
ISSN00036951
Open AccessNo