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Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films
C. Kumari, I. Varun,
Published in Academic Press
Volume: 120
Pages: 67 - 74
BiFeO3 thin films are deposited on FTO coated glass substrates using a simple sol-gel process, limiting thickness about 70 nm and Ag/BiFeO3/FTO RRAM devices are prepared. The devices showed low-voltage bipolar switching with the maximum Ion/Ioff ratio ∼450, and low set and reset voltages ∼1.1 V and −1.5 V, respectively. The devices are stable against on-off cycles with ∼104 s retention time without any significant degradation. The variations in the set and reset voltages are 0.4 V and 0.6 V, respectively. We found that ohmic and trap-controlled space charge limited conductions are responsible for low and high resistance states, respectively. The resistive switching mechanism is attributed to the formation and rupturing of the metal filament during the oxidation and reduction of Ag ions for the set and reset states. The devices showed strong robustness against environmental conditions even after ten months from their synthesis and first measurements, exhibiting good reproducibility, retention and endurance. © 2018 Elsevier Ltd
About the journal
JournalSuperlattices and Microstructures
PublisherAcademic Press