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Resist debris formation and proximity exposure effect in electron beam lithography
P.R. Deshmukh, , O.P. Wadhawan
Published in American Inst of Physics, Woodbury, NY, United States
Volume: 18
Issue: 2
Pages: 873 - 876
In electron beam lithography (EBL), by way of underexposure or underdevelopment, the formation of tiny resist fragments called resist debris (RD) over the exposed pattern areas reflects proximity effects (PE). The theoretically simulated results and corresponding experimental results discussed clearly indicate that the fragment distribution predicts both intrapattern and interpattern PEs of the EBL. The fragment spacing and size is indicative of electron beam size and beam to beam stepping distance used for the pattern exposure.
About the journal
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PublisherAmerican Inst of Physics, Woodbury, NY, United States