Header menu link for other important links
Reduced dielectric charging RF MEMS capacitive switch
K. Mehta, D. Bansal, A. Bajpai, A. Minhas, A. Kumar, M. Kaur, P. Kumar,
Published in SPIE
Volume: 17
Issue: 4
The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20 V and pull-up voltage is 17 V with a switching time of 78 μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles. © 2018 Society of Photo-Optical Instrumentation Engineers (SPIE).
About the journal
JournalData powered by TypesetJournal of Micro/ Nanolithography, MEMS, and MOEMS
PublisherData powered by TypesetSPIE