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Predictive effective mobility model for FDSOI transistors using technology parameters
P. Kushwaha, , Y.S. Chauhan, M. Bhoir, N.R. Mohapatra, S. Khandelwal, J.P. Duarte, Y.-K. Lin, H.-L. Chang, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 448 - 451
The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide range of back gate biases, solely dependent on technology parameters (front and back gate oxide thickness Tox/box, threshold voltage Vth, front/back gate bias Vfg/bg and flat-band voltage Vfb) is proposed. This predictive mobility model allows the user to predict the deviation in device characteristics due to the variations in the device structure. © 2016 IEEE.