The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff) changes it's sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide range of back gate biases, solely dependent on technology parameters (front and back gate oxide thickness Tox/box, threshold voltage Vth, front/back gate bias Vfg/bg and flat-band voltage Vfb) is proposed. This predictive mobility model allows the user to predict the deviation in device characteristics due to the variations in the device structure. © 2016 IEEE.

Harshit Agarwal

Department of Electrical Engineering

IIT Jodhpur

P. Kushwaha

Y.S. Chauhan

M. Bhoir

N.R. Mohapatra

S. Khandelwal

J.P. Duarte

Y.-K. Lin

H.-L. Chang

C. Hu

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Predictive effective mobility model for FDSOI transistors using technology parameters

2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Journal	Data powered by Typeset2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.