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Phase separation and optical properties in oxygen-rich InN filmsPublished in
2008
DOI: 10.1063/1.2963498
Volume: 93
Issue: 14
We have investigated the properties of sputter deposited InN thin films prepared from an In-metal (InN-MT) and an In2O3 target (InN-OT). The excess oxygen present in the InN-OT films alters the microstructure by introducing additional disorder. Depth dependent x-ray photoelectron spectroscopy measurements indicate the presence of higher concentrations of oxygen in InN-OT. Raman spectra show evidence for the presence of an In2O3 secondary phase in both samples. Although the InN-OT film has a higher oxygen concentration, both films show similar electrical and optical properties. © 2008 American Institute of Physics.
Topics: Limiting oxygen concentration (59)%59% related to the paper, Sputter deposition (58)%58% related to the paper, Oxygen (55)%55% related to the paper, Raman spectroscopy (54)%54% related to the paper and X-ray photoelectron spectroscopy (53)%53% related to the paper
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Content may be subject to copyright.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publ... ...This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in [Phase separation and optical properties in oxygen-rich InN films. Applied Physics Letters 93, 14 p142103 (2008)] and may be found at https://doi.org/10.1063/1.2963498.
About the journal
| Journal | Applied Physics Letters |
|---|---|
| ISSN | 00036951 |
Authors (1)
Ambesh Dixit- Department of Physics IIT Jodhpur
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