Performance of symmetric lateral doping-free bipolar junction transistor (BJT) on silicon on insulator (SOI) in universal gates and ring oscillator were investigated. Charge carriers in SOI at emitter and collector regions are induced with two unique approaches, i.e., the charge plasma (CP) and polarity control (PC). Four types of devices (CP-NPN, CP-PNP, PC-NPN, and PC-PNP) was used for bipolar CMOS type NAND and NOR gates. Excellent transient response with rise and fall time less than 5 ns and propagation delay less than 2.4 ns were obtained. © 2020 IEEE.

Shree Prakash Tiwari

Department of Electrical Engineering

IIT Jodhpur

A. Sahu

A. Kumar

&ldquo;IIT Jodhpur is committed to impart quality education to facilitate the creation of qualified, competent and responsible human resources to meet the emerging technological challenges of the world. It is working towards creating an equitable learning platform that is positive, accessible and effective in the face of the modern societal and scientific advancements.

Flexibility in curriculum, in all its academic programs, encompassing elements of teaching, research, creativity, innovation and entrepreneurship is the most unique feature of IIT Jodhpur. The Department of Science and Technology (DST), under the National Mission on Cyber Physical Systems, has identified IIT Jodhpur as a Technology &amp; Innovation Hub in the area of Augmented Reality and Virtual Reality. The institute has also been nominated as the coordinator for the Jodhpur City and Knowledge Cluster by the Office of Principal Scientific Adviser, Government of India.

The sprawling 852-acre IIT Jodhpur campus is a majestic tribute to the deep-rooted diverse cultural heritage of the region. The campus is an architectural masterpiece, which is slated to become an international exemplar of sustainability with net-zero energy, and advanced water and waste management strategies.&rdquo;

Journal	Data powered by Typeset2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
Publisher	Data powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
ISSN	2161-4636
Open Access	No