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Performance Investigation of Universal Gates and Ring Oscillator using Doping-free Bipolar Junction Transistor
A. Sahu, A. Kumar,
Published in Institute of Electrical and Electronics Engineers Inc.
Pages: 125 - 126
Performance of symmetric lateral doping-free bipolar junction transistor (BJT) on silicon on insulator (SOI) in universal gates and ring oscillator were investigated. Charge carriers in SOI at emitter and collector regions are induced with two unique approaches, i.e., the charge plasma (CP) and polarity control (PC). Four types of devices (CP-NPN, CP-PNP, PC-NPN, and PC-PNP) was used for bipolar CMOS type NAND and NOR gates. Excellent transient response with rise and fall time less than 5 ns and propagation delay less than 2.4 ns were obtained. © 2020 IEEE.
About the journal
JournalData powered by Typeset2020 IEEE Silicon Nanoelectronics Workshop, SNW 2020
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.
Open AccessNo