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Pentacene organic field-effect transistors with doped electrode-semiconductor contacts
, W.J. Potscavage Jr., T. Sajoto, S. Barlow, S.R. Marder, B. Kippelen
Published in Elsevier B.V.
Volume: 11
Issue: 5
Pages: 860 - 863
The contact resistance in pentacene organic field-effect transistors (OFETs) is found to be significantly reduced by selectively doping the organic semiconductor region beneath the source/drain electrodes. A 10 nm co-evaporated (1:1 ratio) layer of molybdenum tris-[1,2-bis(trifluoromethyl)ethane-1,2-dithiolene] and pentacene was deposited under the metal electrodes for this purpose. The width-normalized contact resistance (varying channel lengths of 25-200 μm used for the study) in contact-doped devices was lowered significantly (0.5 kΩ-cm) in comparison to reference devices (3.4 kΩ-cm) in the accumulation regime (VGS = -30 V). Doping of the contacts did not affect the stability of the devices under continuous bias stress significantly. © 2010 Elsevier B.V. All rights reserved.
About the journal
JournalData powered by TypesetOrganic Electronics
PublisherData powered by TypesetElsevier B.V.