Header menu link for other important links
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
V. Joshi, , M. Shrivastava
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 66
Issue: 1
Pages: 570 - 577
In part I of this paper, we developed physical insights into the role and impact of acceptor and donor traps - resulting from C-doping in GaN buffer - on avalanche breakdown in AlGaN/GaN HEMT devices. It was found that the donor traps are mandatory to explain the breakdown voltage improvement. In this paper, silicon doping is proposed and explored as an alternative to independently engineer donor trap concentration and profile. Keeping in mind the acceptor and donor trap relative concentration requirement for achieving higher breakdown buffer, as depicted in part I of this paper, silicon carbon codoping of GaN buffer is proposed and explored in this paper. The proposed improvement in breakdown voltage is supported by physical insight into the avalanche phenomena and role of acceptor/donor traps. GaN buffer design parameters and their impact on breakdown voltage as well as leakage current are presented. Finally, a modified Si-doping profile in the GaN buffer is proposed to lower the C-doping concentration near GaN channel to mitigate the adverse effects of acceptor traps in GaN buffer. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.