We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices. © 2016 IEEE.

B M Krishna Mariserla

Department of Physics

IIT Jodhpur

J. Madeo

A. Margiolakis

Z.-Y. Zhao

P.J. Hale

M.K.L. Man

Q.-Z. Zhao

W. Peng

W.-Z. Shi

K.M. Dani

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Optoelectronic properties in the terahertz of femtosecond-laser-ablated GaAs

2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings

Journal	Data powered by SciSpace2016 Progress In Electromagnetics Research Symposium, PIERS 2016 - Proceedings
Publisher	Data powered by SciSpaceInstitute of Electrical and Electronics Engineers Inc.