In this paper, TiN film has been deposited and optimized at room temperature for high power radio-frequency microelectromechanical system (RF-MEMS) applications. Being hard, titanium nitride is used in the contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC magnetron reactive sputtering using a four inch high purity titanium target in a nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used to confirm crystal structure and purity of TiN film. The effect of various N2 pressure on resistivity and hardness of TiN thin film is investigated. The resistivity of the film decreases and hardness increases with N2 pressure. © 2019, The Minerals, Metals & Materials Society.

Kamaljit Rangra

Department of Electrical Engineering

IIT Jodhpur

P. Kumar

D. Bansal

Anuroop

K. Mehta

A. Kumar

D. Boolchandani

&ldquo;IIT Jodhpur is committed to impart quality education to facilitate the creation of qualified, competent and responsible human resources to meet the emerging technological challenges of the world. It is working towards creating an equitable learning platform that is positive, accessible and effective in the face of the modern societal and scientific advancements.

Flexibility in curriculum, in all its academic programs, encompassing elements of teaching, research, creativity, innovation and entrepreneurship is the most unique feature of IIT Jodhpur. The Department of Science and Technology (DST), under the National Mission on Cyber Physical Systems, has identified IIT Jodhpur as a Technology &amp; Innovation Hub in the area of Augmented Reality and Virtual Reality. The institute has also been nominated as the coordinator for the Jodhpur City and Knowledge Cluster by the Office of Principal Scientific Adviser, Government of India.

The sprawling 852-acre IIT Jodhpur campus is a majestic tribute to the deep-rooted diverse cultural heritage of the region. The campus is an architectural masterpiece, which is slated to become an international exemplar of sustainability with net-zero energy, and advanced water and waste management strategies.&rdquo;

Journal of Electronic Materials

Optimization of Titanium Nitride Film for High Power RF MEMS Applications

Journal	Data powered by TypesetJournal of Electronic Materials
Publisher	Data powered by TypesetSpringer New York LLC
ISSN	03615235