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Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
M.-Y. Kao, Y.-K. Lin, , Y.-H. Liao, P. Kushwaha, A. Dasgupta, S. Salahuddin, C. Hu
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 40
Issue: 5
Pages: 822 - 825
A new design to overcome the nonuniformity of capacitance matching along the channel of a negative capacitance field-effect transistor is presented in this letter. By introducing nonuniform oxidation, the thickness of SiO2 at the edge regions of the channel can be increased while maintaining the thickness of SiO2 at the center region of the channel. As a result, the capacitance along the channel becomes more uniform, and better capacitance matching between the dielectric and ferroelectric can be achieved. The Sentaurus TCAD results show improvement of matching in the center region and a significant boost of ON-current (20% improvement). © 2019 IEEE.
About the journal
JournalData powered by TypesetIEEE Electron Device Letters
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.