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On the investigation of an interdigitated, high capacitance ratio shunt RF-MEMS switch for X- band applications
M. Angira, G.M. Sundram, , D. Bansal, K. Maninder
Published in
Volume: 2
Pages: 189 - 192
This paper presents a novel, highly compact capacitive shunt RF MEMS switch. In the presented configuration interdigitation of signal lines with actuation electrodes is considered. The compactness has been achieved further by incorporating HfO2 a high-k dielectric material in place of traditionally used SiO2. The capacitive overlap area reduces by 70%, leading to the overall reduction of about 15% in the switch size. Switch with HfO2 optimized for X - band shows-56.78 dB isolation and - 0.058 dB insertion loss at 10 GHz as compared to the -40.8 dB isolation, -0.1 dB insertion loss for the switch with SiO2. Significant improvement in switching time is also observed. Pull-in voltage of 5.6V is obtained at a gap of 1um between bridge and transmission line. The compact switch can be useful for the future communication applications.
About the journal
JournalTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013