Header menu link for other important links
New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs
Y.-K. Lin, P. Kushwaha, J.P. Duarte, H.-L. Chang, , S. Khandelwal, A.B. Sachid, M. Harter, J. Watts, Y.S. ChauhanShow More
Published in Institute of Electrical and Electronics Engineers Inc.
Volume: 65
Issue: 2
Pages: 463 - 469
Anomalous transconductance with nonmono-tonic back-gate bias dependence observed in the fully depleted silicon-on-insulator (FDSOI) MOSFET with thick front-gate oxide is discussed. It is found that the anomalous transconductance is attributed to the domination of the back-channel charge in the total channel charge. This behavior is modeled with a novel two-mobility model, which separates the mobility of the front and back channels. These two mobilities are physically related by a charge-based weighting function. The proposed model is incorporated into BSIM-IMG and is in good agreement with the experimental and simulated data of FDSOI MOSFETs for various front-gate oxides, body thicknesses, and gate lengths. © 1963-2012 IEEE.
About the journal
JournalData powered by TypesetIEEE Transactions on Electron Devices
PublisherData powered by TypesetInstitute of Electrical and Electronics Engineers Inc.